Unlock instant, AI-driven research and patent intelligence for your innovation.

Etching solution for polycrystal 'carbon head material' silicon carbon separation and preparation method thereof

A technology of carbon head material and etching solution, which is applied in the field of raw material processing, can solve the problems of silicon-carbon separation technology difficulties and unsatisfactory use effects, and achieve the effect of wide application range and alleviating the shortage situation

Inactive Publication Date: 2009-10-07
LONGI GREEN ENERGY TECH CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Manually knock off the part of the "carbon head" that is not in direct contact with graphite, and then use it to pull silicon single crystal after cleaning. However, due to the relatively high carbon content, the use effect is not ideal
Since silicon and carbon belong to the same group in the periodic table of elements and have many similar physical and chemical properties, there are certain technical difficulties in the separation of silicon and carbon.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Take 85 kg (85%) of electronic-grade concentrated sulfuric acid (concentration above 98%) and pour it into a container, add 5 kg (5%) of manganese dioxide, 5 kg (5%) of hydrogen peroxide and 5 kg (5%) of hydrofluoric acid Mix and stir thoroughly to form a mixed liquid, add the mixed liquid to concentrated sulfuric acid several times in small amounts and stir well to obtain the product.

Embodiment 2

[0038] Take 97 kg (97%) of electronic-grade concentrated sulfuric acid (concentration above 98%) and pour it into a container, add 1 kg (1%) of manganese dioxide, 1 kg (1%) of hydrogen peroxide and 1 kg (1%) of hydrofluoric acid Mix and stir thoroughly to form a mixed liquid, add the mixed liquid to concentrated sulfuric acid several times in small amounts and stir well to obtain the product.

Embodiment 3

[0040] Take 91 kg (91%) of electronic-grade concentrated sulfuric acid and pour it into a container, mix 3 kg (3%) of manganese dioxide, 3 kg (3%) of hydrogen peroxide and 3 kg (3%) of hydrofluoric acid, and stir fully to form The mixed solution is obtained by adding the mixed solution to concentrated sulfuric acid several times in small amounts and fully stirring.

[0041] Experimental detection:

[0042] For the same polycrystalline "carbon head", after removal by physical knockout method, the carbon content in it is ≥5×10 17 atoms / m 3 , its carbon content cannot meet the technical index requirements of solar silicon materials. After being treated with the etching solution obtained in Example 3 of the present invention, the carbon content thereof is ≤ 1×10 17 atoms / m 3 , and its carbon content can meet the technical index requirements of solar silicon materials.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an etching solution for polycrystalline "carbon head" silicon-carbon separation and a preparation method thereof. It is composed of the following components according to the mass percentage: 85%-97% of electronic-grade concentrated sulfuric acid, manganese dioxide 1 %~5%, hydrogen peroxide 1%~5%, hydrofluoric acid 1%~5%, the total amount of each component is 100%. According to the mass percentage, 1% to 5% of manganese dioxide, 1% to 5% of hydrogen peroxide, 1% to 5% of hydrofluoric acid and 85% to 97% of electronic grade concentrated sulfuric acid are used, and the total amount of the above components is 100%. ; Mix and fully stir the obtained manganese dioxide, hydrogen peroxide and hydrofluoric acid to form a mixed solution; add a small amount of the obtained mixed solution to concentrated sulfuric acid several times, and fully stir to obtain the product. The carbon in the "carbon head" can be completely separated from the polysilicon to obtain a high-purity polysilicon material, alleviating the shortage of silicon raw materials.

Description

technical field [0001] The invention belongs to a raw material processing technology applied in the solar energy and semiconductor silicon material industries, and specifically relates to an etching solution used for the separation of polycrystalline "carbon head" silicon and carbon, and the invention also relates to a preparation method of the etching solution. Background technique [0002] With the development of the electronic information industry, the worldwide demand for semiconductor materials has shown a significant increase. The large demand for semiconductor materials and the development of new energy sources such as solar cells mean that the demand for monocrystalline silicon materials is rising, and the growth of monocrystalline silicon is based on polycrystalline silicon materials. [0003] High-purity polysilicon is grown on the basis of a U-shaped high-purity silicon core with graphite electrodes at both ends, after a long period of vapor deposition. After the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/24
Inventor 李振国赵可武
Owner LONGI GREEN ENERGY TECH CO LTD