MRAM cell, array, and MRAM cell programming method

Abstract

The invention relates to a magnetic random access memory unit, an array and a method for programming the memory unit. The magnetic random access memory unit includes a first word line and a first bit line perpendicular to the first word line. Disposed at an intersection of the first word line and the first bit line is a magnetic tunnel junction element with a perpendicular magnetic field direction. To program an MRAM cell, current is driven across two bit lines and two word lines proximate to the memory cell. Therefore, the MRAM cell has a high magnetic transition and low programming current. The invention can deal with the high magnetic field-strong magnetic transition point problem of the traditional magnetic random access memory element. Moreover, compared with the structure of the traditional magnetic random access memory, the present invention can greatly reduce the programming current used by the conventional magnetic random access memory unit. In addition, the present invention can improve the reproducibility or stability of the conventional MRAM element without increasing the switching current.

Description

technical field [0001] The present invention relates to a computer memory, and more particularly to a perpendicular magnetic random access memory (MRAM) with high magnetic transition and low programming current. Background technique [0002] Magnetic random access memory (memory, memory, storage medium, hereinafter referred to as memory) is a non-volatile memory used for long-term data storage. The read and write functions of magnetic random access memory devices are faster than those of general long-term storage devices, such as hard disk drives. In addition, MRAM devices are more compact and consume less power than other common long-term storage devices. [0003] A magnetic random access memory unit is mainly a magnetic tunnel junction (MTJ) element, which has two ferromagnetic layers separated by a thin insulating barrier tunnel. A rotation-polarization tunnel for conducting electrons is interposed between the two ferromagnetic layers, mainly for the orientation of the ...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the defects of the existing magnetic random access memory unit and provide a magnetic random access memory unit with a new structure. The technical problem to be solved is to make it without increasing the switching current, Improve the reproducibility or stability of the magnetic random access memory element to solve the high magnetic field-strong magnetic switching point of the existing conventional magnetic random access memory, so that the switching of the memory unit is not always stable, so it is more suitable for practical

[0009] Another object of the present invention is to provide a magnetic random access memory array. The technical problem to be solved is to make the magnetic random access memory in the extremely small element area have high magnetic stability, so as to solve the existing conventional High magnetic field-strong magnetic transition point problem of magnetic random access memory device

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