Graphene fuse device and preparation method thereof

Abstract

The invention discloses a novel fuse device based on graphene and a preparation method thereof. According to the novel fuse wire based on the graphene, on the basis of a traditional two-end fuse wire, a vertical metal gate is added to form a three-end structure, and a channel is burnt out through tunneling current from the metal gate to the channel. The preparation of the fuse memory device is realized by using electron beam exposure and lift-off processes, the process is simple, large-area device preparation can be realized, and the process cost is saved. According to the graphene fuse device provided by the invention, the programming voltage can be reduced to about 4V, meanwhile, the programming current can be reduced, and mild and low-power consumption can be realized.

Description

technical field [0001] The invention relates to a nano-semiconductor device and a preparation method thereof, in particular to a graphene fuse device and a preparation method thereof. Background technique [0002] One-time programmable memory is a kind of non-volatile memory, which is only allowed to be written once during the application process, and the information cannot be changed once written. In general, it has two forms: fuse and anti-fuse. It is precisely because of its one-time programming characteristics that it has more advantages in reliability and security, and can be integrated into FPGA, PROM (programmable read only memory, one-time programmable read-only memory) and other one-time programmable memories, and are widely used in high-reliability aerospace, military FPGA and other fields. [0003] A traditional electric fuse (e-Fuse) is a two-terminal structure, including an anode, a cathode, and a thin strip-shaped fuse in which the anode and the cathode are co...

AI Technical Summary

Problems solved by technology

[0004] A key challenge of the traditional two-terminal fuse device is the need to provide a large enough programming current to cause electromigration in the thin strip fuse, and high-current programming causes serious heat accumulation, which affects the service life and performance of the chip; the two-terminal fuse requires High current or high voltage is used for programming, and it relies on heat for programming, which requires heat accumulation during the programming process, resulting in slow programming speed and high power consumption;

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