Graphene fuse device and preparation method thereof

A technology of graphene and graphene film, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as heat accumulation, high power consumption, slow programming speed, etc. consumption, low power consumption effect

Pending Publication Date: 2022-06-03
XIANGTAN UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] A key challenge of the traditional two-terminal fuse device is the need to provide a large enough programming current to cause electromigration in the thin strip fuse, and high-current programming causes serious heat accumulation, which affects the service life and performance of the chip; the two-terminal fuse requires High current or high voltage is used for programming, and it relies on heat for programming, which requires heat accumulation during the programming process, resulting in slow programming speed and high power consumption;

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  • Graphene fuse device and preparation method thereof
  • Graphene fuse device and preparation method thereof
  • Graphene fuse device and preparation method thereof

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Embodiment Construction

[0038] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the various figures, the same elements are designated by the same reference numerals, and the various parts of the figures are not drawn to scale. Additionally, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be depicted in one figure.

[0039] It will be understood that, in describing the structure of a device, when a layer or region is referred to as being "on" or "over" another layer or region, it can be directly on the other layer or region, or Other layers or regions are also included between it and another layer, another region. And, if the device is turned over, the layer, one region, will be "under" or "under" another layer, another region.

[0040] In order to describe the situation directly above another layer, another area, the expression "A is directly above ...

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Abstract

The invention discloses a novel fuse device based on graphene and a preparation method thereof. According to the novel fuse wire based on the graphene, on the basis of a traditional two-end fuse wire, a vertical metal gate is added to form a three-end structure, and a channel is burnt out through tunneling current from the metal gate to the channel. The preparation of the fuse memory device is realized by using electron beam exposure and lift-off processes, the process is simple, large-area device preparation can be realized, and the process cost is saved. According to the graphene fuse device provided by the invention, the programming voltage can be reduced to about 4V, meanwhile, the programming current can be reduced, and mild and low-power consumption can be realized.

Description

technical field [0001] The invention relates to a nano-semiconductor device and a preparation method thereof, in particular to a graphene fuse device and a preparation method thereof. Background technique [0002] One-time programmable memory is a kind of non-volatile memory, which is only allowed to be written once during the application process, and the information cannot be changed once written. In general, it has two forms: fuse and anti-fuse. It is precisely because of its one-time programming characteristics that it has more advantages in reliability and security, and can be integrated into FPGA, PROM (programmable read only memory, one-time programmable read-only memory) and other one-time programmable memories, and are widely used in high-reliability aerospace, military FPGA and other fields. [0003] A traditional electric fuse (e-Fuse) is a two-terminal structure, including an anode, a cathode, and a thin strip-shaped fuse in which the anode and the cathode are co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/112H01L21/8246
CPCH10B20/20Y02D10/00
Inventor 李雪娉邱晨光彭练矛
Owner XIANGTAN UNIV
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