Feedback type two-end fuse storage unit and preparation method thereof

Abstract

The invention discloses a feedback type two-end fuse storage unit and a preparation method thereof. According to the feedback type two-end fuse storage unit, on the basis of a traditional two-end fuse, the vertical metal gate is additionally arranged, the gate electrode is arranged on one side of the drain electrode and electrically connected with the drain electrode, after a voltage is applied to the drain end, a transverse voltage VDS and a vertical voltage VGS can be generated at the same time, and the two voltages are equal in magnitude, so that the stability of the two-end fuse storage unit is improved. By reasonably designing the thickness of the gate oxide layer, burnout from the gate to the channel in the vertical direction can occur first. Burnout in the vertical direction is achieved through tunneling current from the grid electrode to the channel, programming voltage and programming current can be reduced through the design, and mild low power consumption is achieved. According to the invention, the preparation of the fuse memory unit is realized by using electron beam exposure and lift-off processes, the process is simple, large-area device preparation can be realized, and the process cost is saved.

Description

technical field [0001] The invention relates to a nano-semiconductor device and a preparation method thereof, in particular to a feedback type two-terminal fuse device and a preparation method thereof. Background technique [0002] One-time programmable memory is a kind of non-volatile memory, which is only allowed to be written once during the application process, and the information cannot be changed once written. In general, it has two forms: fuse and anti-fuse. It is precisely because of its one-time programming feature that it has more advantages in reliability and security, and can be integrated into FPGA, PROM (programmable read only memory, one-time programmable read-only memory) and other one-time programmable memories, and are widely used in high-reliability aerospace, military FPGA and other fields. [0003] A traditional electric fuse (e-Fuse) is a two-terminal structure, including an anode, a cathode, and a thin strip-shaped fuse in which the anode and the cath...

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Problems solved by technology

[0004] The physical mechanism of the traditional fuse is based on the electromigration effect. When the device is working, the electrons in the metal wire undergo electron migration under the action of a large current, and the metal ions undergo mass transport along the conductor, causing voids or crystals to form in some parts of the conductor. Whiskers (hills), the metal wire breaks, forming a high-resistance state; traditional fuses at both ends require high current or high voltage to program, and it relies on heat to program, which requires heat accumulation during the programming process, resulting in slow programming speed and low performance. consumes a lot;

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