Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing pixel structure

A manufacturing method and pixel structure technology, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of complicated steps, high production cost, and the inability to reduce the manufacturing cost of pixel structure, so as to reduce manufacturing cost and save material usage volume effect

Active Publication Date: 2009-11-11
AU OPTRONICS CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Based on the above, the known method of fabricating the color filter layer on the thin film transistor array requires at least seven photolithography and etching processes, and the steps are complicated and require high production costs.
In addition, the above-mentioned pixel structure requiring at least seven photolithography and etching processes needs to use multiple masks with different patterns. Since the mask is very expensive, the manufacturing cost of the pixel structure will not be reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing pixel structure
  • Method for preparing pixel structure
  • Method for preparing pixel structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] In order to make the above-mentioned features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

[0047] Figure 2A ~ Figure 2H is a schematic flow chart of a method for manufacturing a pixel structure of the present invention, and Figure 2A' , Figure 2E' , Figure 2G' as well as Figure 2H' respectively Figure 2A , Figure 2E , Figure 2G as well as Figure 2H top view. in particular, Figure 2A' , Figure 2E' , Figure 2G' and Figure 2H' respectively Figure 2A , Figure 2E , Figure 2G as well as Figure 2H Schematic cross-section along section line AA'. Please refer to Figure 2A as well as Figure 2A' Firstly, a substrate 202 is provided, and the material of the substrate 202 is, for example, hard or soft materials such as glass and plastic. Next, the gate 212 is formed on the substrate 202, wherein the method of forming the gate 212 ca...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing a pixel structure, which includes the following steps. Firstly, a gate and a gate insulating layer covering the gate are formed on the substrate. Afterwards, on the gate insulating layer, a semiconductor layer, a conductive layer, and a photosensitive black matrix for accommodating openings in the color filter layer are sequentially formed. The photosensitive black matrix includes a first block and a second block, and the thickness of the first block is less than the thickness of the second block. Afterwards, using the photosensitive black matrix as a photomask, a channel layer, a source electrode and a drain electrode are simultaneously formed on the gate insulating layer above the gate electrode. Next, a protective layer is formed on the film layer, and a color filter layer is formed in the opening of the color filter layer by an inkjet printing process, and a dielectric layer is formed, and a patterning process of the dielectric layer and the protective layer is performed, to expose the drain. Afterwards, a pixel electrode electrically connected to the drain is formed.

Description

technical field [0001] The present invention relates to a method for fabricating a pixel structure, and more particularly to a method for fabricating a pixel structure with a color filter layer using less photolithography and etching process (PEP). Background technique [0002] Liquid crystal displays have the advantages of high image quality, small size, light weight, low voltage drive, low power consumption, and wide application range. Therefore, they have replaced cathode ray tubes (Cathode Ray Tube, CRT) and become the mainstream of the new generation of displays. A traditional liquid crystal display panel is composed of a color filter substrate with a color filter layer, a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer arranged between the two substrates. In order to improve the resolution of the panel and the aperture ratio of the pixels, and to avoid alignment errors when the color filter substrate and the TFT array substrate ar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L27/12G02F1/1362
Inventor 余宙桓江俊毅蔡佳琪童振邦萧祥志张家铭张宗隆赖哲永周汉唐张峻恺廖达文
Owner AU OPTRONICS CORP