Optical approximate correction method and its photomask pattern

An optical approximation correction and photomask technology, which is applied in optics, microlithography exposure equipment, and originals for photomechanical processing, etc., can solve the problems of reducing device yield and improve yield, focus depth and energy The effect of increased margin, depth of focus, and increased energy margin
CN100561350CInactive Publication Date: 2009-11-18SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2009-11-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

An optical approximation correction method, comprising: determining a figure with forbidden distance; forming a plurality of jagged or rectangular protrusions on both sides of the forbidden space figure; inserting a plurality of auxiliary scattering bars between the forbidden space figures. The photomask pattern corrected by optical approximation can form a pattern with high resolution, large depth of focus and energy margin.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an optical approximation correction method in a photolithography process and a photomask pattern thereof. Background technique

[0002] With the development of semiconductor technology towards small line width and high integration, higher requirements are put forward for the photolithography process. The optical exposure wavelength has also been developed from 365nm to 248nm, 193nm or even smaller, and the immersion exposure technology based on high refractive index medium has also been developed. As the size of the device shrinks, the size of the pattern on the photolithography mask is getting smaller and smaller, and the pitch of the pattern is getting closer and closer. Optical interference and diffraction effects make the resolution of the pattern transferred to the wafer less than ideal. Traditional binary masks can no longer meet the needs of deep submi...

Claims

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