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Semiconductor laser device having incomplete bonding region and electronic equipment

A laser device and semiconductor technology, which is applied to the structure of semiconductor lasers, semiconductor devices, and optical waveguide semiconductors, can solve problems such as insufficient reliability improvement, achieve high reliability, suppress deformation, and improve reliability.

Active Publication Date: 2009-12-02
SHARP FUKUYAMA LASER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, in the conventional semiconductor laser device 1, since the non-alloyed layer 17 is formed directly under the light-emitting region 8 of the semiconductor laser element 2, there is a problem that the non-alloyed layer 17 and the ohmic electrode layer ( Alloyed layer 19) or the active region (light-emitting region 8) have different thermal expansion coefficients, and stress is generated on the light-emitting region 8, so that the effect of improving reliability cannot be sufficiently obtained.

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  • Semiconductor laser device having incomplete bonding region and electronic equipment
  • Semiconductor laser device having incomplete bonding region and electronic equipment
  • Semiconductor laser device having incomplete bonding region and electronic equipment

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no. 1 approach

[0042] Figure 1AA cross section of the semiconductor laser element 100 included in the first embodiment of the semiconductor laser device of the present invention is shown. In this first embodiment, the semiconductor laser element 100 has a ridge structure. Semiconductor laser element 100 includes: n-GaAs substrate 101, n-GaInP buffer layer 102, n-AlGaInP cladding layer 103, quantum well active layer 104, p-AlGaInP first cladding layer 105, etch stop layer 106, p-AlGaInP The second cladding layer 107 , the p-GaAs contact layer 108 , the p-side contact electrode 109 , the dielectric film 110 , the plated metal layer 112 as a conductive electrode, and the n-electrode 113 .

[0043] In addition, the semiconductor laser element 100 has the Figure 1A The light-emitting area 150 extending in strips perpendicular to the direction of the paper. Furthermore, this semiconductor laser element 100 has a solder layer 114 laminated on the plated metal layer 112 .

[0044] The solder l...

no. 2 approach

[0061] figure 2 A second embodiment of the semiconductor laser device of the present invention is shown. This second embodiment, in place of Figure 1C The semiconductor laser element 100 differs from the first embodiment in that it has a semiconductor laser element 500 . Therefore, in this second embodiment, the same reference numerals are used for the same parts as those of the first embodiment, and differences from the first embodiment will be mainly described.

[0062] In the first embodiment, the second cladding 107 is left only in the region to become the ridge, and in the second embodiment, as figure 2 As shown, there is not only the second cladding layer 107 constituting the ridge, but also the second cladding layer TS separated from the second cladding layer 107 by a predetermined dimension (for example, 5 μm to 100 μm) on both sides in the X direction.

[0063] That is, in this second embodiment, at the time of manufacture, a region is etched from the end of the...

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Abstract

The present invention relates to semiconductor laser devices and electronic equipment. To provide a semiconductor laser device capable of reducing stress generated in a semiconductor laser element and achieving a longer life. According to the semiconductor laser device, the solder layer (114) does not exist in the first region (R1) from the center line (J1) of the light emitting region (150) to both sides facing the orthogonal direction X Leave the area at the specified dimension (L1). That is, the first region ( R1 ) where the light emitting region ( 150 ) exists becomes an incompletely bonded region between the solder layer ( 114 ) of the semiconductor laser element ( 100 ) and the heat sink ( 200 ). Therefore, stress applied to the light emitting region (150) due to differences in thermal expansion coefficients of the semiconductor laser element (100), the solder layer (114) and the radiator (200) during operation can be reduced.

Description

technical field [0001] The present invention relates to semiconductor laser devices and electronic equipment. Background technique [0002] Conventionally, in semiconductor laser devices, heat sinks have been used in order to prevent reduction in luminous efficiency due to temperature rise of the semiconductor laser element during laser operation, damage to the semiconductor laser element, and the like. That is, a heat sink is adhered to the lower surface of the semiconductor laser element through a solder layer, and the heat generated during operation is effectively dissipated from the heat sink. [0003] However, since the thermal expansion coefficients of the semiconductor laser element and the heat sink are different, stress is generated, and internal stress is generated in the semiconductor laser element. That is, there is a problem that the semiconductor layer constituting the semiconductor laser element is deformed. [0004] To deal with this problem, in the convent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024H01S5/00H01L21/60H01L23/36
CPCH01S5/0425H01S5/02272H01S5/0224H01S5/02476H01S5/22H01L24/32H01S5/04252H01S5/04254H01S5/0234H01S5/0237
Inventor 国政文枝
Owner SHARP FUKUYAMA LASER CO LTD
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