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Unit circuit, control method thereof, electronic device, electro-optical device

A unit circuit, control signal technology

Inactive Publication Date: 2009-12-16
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the above technique, two driving transistors are required, and furthermore, there is a problem that the circuit configuration such as two capacitive elements corresponding to each driving transistor becomes complicated.
In particular, if the number of circuit elements such as transistors and capacitance elements increases, the circuit area will increase accordingly, and the numerical aperture will decrease accordingly.
[0006] In addition, in the above technique, since the negative voltage for applying to the gate electrode of the driving transistor is supplied separately from the positive voltage, the circuit configuration is complicated and the dynamic range of the voltage value is extended, so that a problem occurs. The disadvantages of increasing the burden on the circuit or consuming electric energy
In addition, the current flowing in the OLED element is affected by the threshold voltage of the driving transistor

Method used

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  • Unit circuit, control method thereof, electronic device, electro-optical device
  • Unit circuit, control method thereof, electronic device, electro-optical device
  • Unit circuit, control method thereof, electronic device, electro-optical device

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Embodiment Construction

[0083] figure 1 is a block diagram showing a schematic configuration of an electro-optical device according to an embodiment of the present invention, figure 2 A circuit diagram of a pixel circuit. Such as figure 1 As shown, the electro-optical device 1 includes: a display panel A, a scanning line driving circuit 100 , a data line driving circuit 200 , a control circuit 300 and a power supply circuit 500 . Wherein, in the display panel A, m (for example, m=360) scanning lines 101 and m control lines 102 are formed parallel to the X direction. In addition, n (for example, n=480) data lines 103 are formed parallel to the Y direction perpendicular to the X direction. In addition, pixel circuits 400 are respectively provided corresponding to intersections of the scanning lines 101 and the data lines 103 . The pixel circuit 400 includes an OLED element 430 . Each pixel circuit 400 is supplied with a high potential Vdd or a low potential Vss as a power supply voltage via a pow...

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PUM

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Abstract

An electro-optical device (1) includes a plurality of pixel circuits (400). Each pixel circuit (400) has: an OLED element (430), a drive transistor (410) composed of an amorphous silicon transistor, a capacitive element (420) with one end connected to the gate electrode of the drive transistor (410), an insertion drive transistor (410 ) between the gate electrode and the source electrode of the transistor (411), the transistor (412) inserted between the other end of the capacitive element (420) and the data line (103), a potential difference is generated at both ends of the capacitive element (420) In the state, the transistor (411) is turned off, and the voltage applied to the other end of the capacitive element (420) via the transistor (412) is reduced in a state where one end of the capacitive element (420) is suspended. In this way, a negative voltage can be applied to the driving transistor with a simple circuit structure.

Description

technical field [0001] The present invention relates to an appropriate unit circuit used for driving a driven element such as an organic light emitting element or a liquid crystal element or an electronic element, a manufacturing method thereof, an electronic device such as an electro-optical device, and an electronic device. Background technique [0002] Liquid crystal elements generally use transistors to actively drive electro-optical elements such as organic light emitting diodes (Organic Light Emitting Diode, hereinafter appropriately referred to as "OLED elements"), but in order to achieve high performance and multi-gradation Instead, precise control of the transistors is required. [0003] Among such driving transistors, low-temperature polysilicon (LTPS) transistors have been used conventionally, but in recent years, amorphous silicon transistors have attracted attention as driving transistors because manufacturing costs can be suppressed and uniform characteristics ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/20
CPCG09G2310/061G09G2320/043G09G2310/0262G09G3/3233G09G2330/02G09G2300/0819G09G2310/0254G09G3/3291G09G3/30G09G3/20
Inventor 宫泽贵士
Owner SEIKO EPSON CORP