Technique for preparing bipolar type long-direction NPN tube using phosphorus-buried and deep phosphorus-buried technique

Abstract

The bipolar longitudinal NPN tube manufacturing process using phosphorus burying and deep phosphorus burying technologies is a process method for using the phosphorus burying and deep phosphorus burying technologies in the manufacturing process for the phosphorus burying and deep phosphorus burying technologies, for the purpose of reducing saturated pressure drop of NON tube and enhancing the circuit output power. The bipolar longitudinal NPN tube manufacturing process using phosphorus burying and deep phosphorus burying technologies means using phosphorus burying and deep phosphorus burying technologies in the bipolar process for manufacturing the NPN tube. The area when using phosphorus burying and deep phosphorus burying technologies is the same as the area when using common antimony burying technical chip, the extra chip area is not required and only the processes are different from each other. Material sheet using the phosphorus burying and deep phosphorus burying technologies to manufacture the NPN tube is P-type <111> crystallographic direction, resistance rate is 10 to 20 Omega.cm, and after using the deep phosphorus burying technology, the concentration and volume when the deep phosphorus is diffused too deep can be efficiently compensated owing to the upward turning effect of the deep phosphorus burying, thus settling the bottleneck problem about larger resistance at the contact position of the deep phosphorus and burying layer.

Description

technical field [0001] The invention relates to a process method adopting phosphorus burying and deep phosphorus burying technology in the manufacturing process of a bipolar vertical NPN tube, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] With the development of international semiconductor technology and the rising cost of raw materials, countries are increasingly competing in the field of integrated circuits, and the technical requirements for power amplifier integrated circuits are also getting higher and higher. Output as much power as possible. The output power of the chip is closely related to the output level of the entire circuit. For this reason, the design of the output stage of the power amplifier integrated circuit is particularly critical. At present, power amplifier circuits on the market use more output stage structures such as figure 1 As shown in the figure, the NPN tube T1 and the NPN tube T2 form a compl...

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Problems solved by technology

However, due to the small diffusion coefficient of antimony, the resistance of the antimony buried layer itself and the resistance between the base area and the buried antimony are relatively large; and when the deep phosphorus diffuses to a deep place, its volume and concentration are small, so the resistance at the contact with the buried layer larger

The above resistance in the series resistance of the collector of the NPN tube cannot be further reduced, which limits the further reduction of the saturation voltage drop of the NPN tube, thus affecting the further improvement of the output power of the power amplifier circuit

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