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Green light LED

A light-emitting diode and green light technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor antistatic ability, low external quantum efficiency, and low external quantum efficiency of green light-emitting diodes, so as to reduce V-type defects , Strong antistatic ability

Inactive Publication Date: 2010-01-13
EPILIGHT TECH +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In recent years, the external quantum efficiency of GaN-based blue LEDs has been greatly improved, reaching about 45% (see: Appl. Much lower (cf: Appl. Phys. Lett., 86, 101903, etc.)
Green light-emitting diodes require high-quality and high-In composition In x Ga 1-x N / GaN quantum well (x ≥ 15%), however, due to the high InGaN material composition of InGaN prone to In phase separation, and In x Ga 1-x The interface of N / GaN multi-quantum wells is easy to produce a large number of V-type defects, which is the main reason for the low external quantum efficiency and poor antistatic ability of green LEDs.

Method used

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Embodiment 1

[0023] Using MOCVD equipment to epitaxially grow high-brightness green light-emitting diodes, the substrate used is (001) sapphire. Such as figure 1 As shown, firstly, the sapphire substrate 1 was heated to 1200 °C in the MOCVD reaction chamber, under H 2 The temperature is lowered for 5 minutes, and then the temperature is lowered to 500-600°C to grow a GaN nucleation layer 2 with a thickness of about 30nm; then the temperature is raised to 1160°C, and the H 2 As a carrier gas, epitaxially grow a 4-micron thick GaN buffer layer at a growth rate of 3.0 microns / hour, including a 0.5-micron thick unintentionally doped GaN layer 3 and a 3.5 micron-thick Si-doped n-type GaN buffer layer 4, The doping concentration of silicon is 5×10 17 cm -3 up to 5×10 19 cm -3 between; then lower the temperature to 650-750°C, switch the carrier gas to N 2 , grow 5 In on this buffer layer 0.2 Ga 0.8 N(2.5nm) / In 0.8 Ga 0.2 N(0.5nm) / GaN(10nm), where the molar flow of TEGa is 0.1×10 -5 mol...

Embodiment 2

[0025] Using MOCVD equipment to epitaxially grow high-brightness green light-emitting diodes, the substrate used is (001) sapphire. Such as figure 1 As shown, firstly, the sapphire substrate 1 was heated to 1200 °C in the MOCVD reaction chamber, under H 2 The temperature is lowered for 5 minutes, and then the temperature is lowered to 500-600°C to grow a GaN nucleation layer 2 with a thickness of about 30nm; then the temperature is raised to 1160°C, and the H 2 As a carrier gas, epitaxially grow a 4-micron thick GaN buffer layer at a growth rate of 3.0 microns / hour, including a 0.5-micron thick unintentionally doped GaN layer 3 and a 3.5 micron-thick Si-doped n-type GaN buffer layer 4, The doping concentration of silicon is 5×10 17 cm -3 up to 5×10 19 cm -3 between; then lower the temperature to 650-750°C, switch the carrier gas to N 2 , grow 5 In on this buffer layer 0.2 Ga 0.8 N(2.5nm) / Al 0.8 Ga 0.2 N(0.5nm) / GaN(10nm), where the molar flow of TEGa is 0.1×10 -5mol / ...

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Abstract

The invention provides a green LED, comprising an InxGa1-xN / GaN multi-quantum well which has an insert layer; wherein x is more than or equal to 0.15 and less than or equal to 0.35. The insert layer is InyGa1-yN, wherein y is more than x and is less than or equal to 1; or that the insert layer is AlyGa1-y / N, wherein y is more than 0 and less than or equal to 1; or that the insert layer is IncAl1-Cn, wherein c is more than x and is less than or equal to 1; or that the inert layer is AlaInbGa1-a-Bn, wherein a is more than 0 and less than 1, b is more than 0 and less than 1, and the values of a and b meet the requirement that the potential barrier of AlaInbGa1-a-Bn is higher than that of GaN. The insert layer is 0.1-5nm thick, and the number of the quanta well of the InxGa1-xN / GaN multi-quanta well is 1-20. The LED can reduce V type defects between the InGaN and the GaN, reduce the precipitation of component In; and the green LED is of high brightness and strong anti-static capability.

Description

technical field [0001] The invention relates to the field of optoelectronic semiconductors, in particular to a green light emitting diode. Background technique [0002] GaN-based III-V nitrides are important direct-bandgap wide-bandgap semiconductor materials. GaN-based materials have excellent mechanical and chemical properties, excellent photoelectric properties, and their bandgap ranges from 0.7eV (InN) to 6.2eV (AlN) at room temperature. Ultraviolet and GaN-based materials have a wide range of application backgrounds in optoelectronic devices such as blue light, green light, purple light and white light diodes. [0003] In recent years, the external quantum efficiency of GaN-based blue LEDs has been greatly improved, reaching about 45% (see: Appl. Much lower (cf: Appl. Phys. Lett., 86, 101903, etc.). Green light-emitting diodes require high-quality and high-In composition In x Ga 1-x N / GaN quantum well (x ≥ 15%), however, due to the high InGaN material composition o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06
Inventor 潘尧波郝茂盛颜建锋周健华张国义
Owner EPILIGHT TECH
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