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Multi-purpose non-volatile memory card

A technology of memory and storage elements, applied in the field of non-volatile memory and its operation, which can solve the problems of difficulty, high accuracy and multi-time

Inactive Publication Date: 2007-08-22
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After a memory cell has been cycled a large number of times, programming can be more time consuming and more difficult with the necessary high accuracy due to charge trapped in the dielectric after repeated use and other factors operate in a multi-state form

Method used

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  • Multi-purpose non-volatile memory card
  • Multi-purpose non-volatile memory card
  • Multi-purpose non-volatile memory card

Examples

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Embodiment approach

[0067] As described above, various aspects of the present invention can be implemented as a memory card that can be removably inserted into a mating socket of a host system. Such a card may include an entire memory system consisting of a controller chip 21 (FIG. 1) (where the controller manages memory in accordance with firmware 25) and a memory chip 22 that may store data in binary mode or multi-state mode; or may be The controller and memory array with associated peripheral circuits are provided in separate cards, respectively. The memory chip 22 may be constructed according to the embodiments described above or according to another embodiment that allows a selection mode.

[0068] More specifically, a particular embodiment of the present invention is an integrated circuit card in which user data can be stored in binary mode or multi-state mode in response to user commands. This enables a user of a host (eg, a digital camera) that selects the card to choose whether to use a...

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Abstract

A flash non-volatile memory system that normally operates its memory cells in multiple storage states is provided with the ability to operate some selected or all of its memory cell blocks in two states instead. The two states are selected to be the furthest separated of the multiple states, thereby providing an increased margin during two state operation. This allows faster programming and a longer operational life of the memory cells being operated in two states when it is more desirable to have these advantages than the increased density of data storage that multi-state operation provides. An exemplary embodiment is as a memory card where the user can choice between two state and multi-state operation.

Description

technical field [0001] The present invention relates generally to a non-volatile memory and operation thereof, and more particularly, to techniques for selectively operating a multi-state memory with fewer states than the multi-state memory can operate on. Background technique [0002] The principles of the present invention apply to various types of non-volatile memories - those currently existing and those intended to use new technologies being developed. However, embodiments of the present invention are described with reference to an example of a Flash Electrically Erasable Programmable Read Only Memory (EEPROM) in which the storage element is a floating gate. [0003] In current commercial products, each floating gate storage element in a flash EEPROM array typically stores a single bit of data by operating in a binary mode, where two threshold level ranges of the floating gate transistors are defined as the stored power flat. The threshold level of a floating gate tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/56G11C16/04G11C16/12
CPCG11C11/56G11C11/5621G11C11/5628G11C16/0483G11C16/12G11C2211/5641G11C16/00
Inventor 罗恩·巴尔齐莱鲁文·埃尔哈米亚斯
Owner SANDISK TECH LLC
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