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Manufacturing method of metal-isolating layer-metal capacitor

A technology of metal capacitors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, circuits, etc., can solve the problems of reduced breakdown voltage of capacitors, poor surface flatness of metal layers, and influence on reliability of capacitors, etc., to achieve The effect of avoiding the reduction of breakdown voltage and improving the breakdown voltage and reliability

Active Publication Date: 2007-10-03
UNITED MICROELECTRONICS CORP
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Problems solved by technology

[0005] However, because the surface flatness of the metal layer as the lower electrode of the capacitor is not good, when the above-mentioned method forms a thinner capacitor dielectric layer on the lower electrode, it is easy to cause the breakdown voltage (Breakdown Voltage) of the capacitor to decrease, and then Seriously affect the reliability of the capacitor

Method used

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  • Manufacturing method of metal-isolating layer-metal capacitor
  • Manufacturing method of metal-isolating layer-metal capacitor
  • Manufacturing method of metal-isolating layer-metal capacitor

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Embodiment Construction

[0036] FIG. 1A to FIG. 1G are schematic cross-sectional flow diagrams illustrating a manufacturing method of a Metal-Insulator-Metal (MIM) capacitor according to an embodiment of the present invention.

[0037] Referring to FIG. 1A , firstly, a substrate 100 is provided. The substrate 100 is, for example, a silicon substrate, or a substrate on which semiconductor elements and metal interconnection structures have been formed. After that, a metal layer 102 is formed on the substrate 100 to serve as the bottom electrode of the metal-insulator-metal capacitor. The material of the metal layer 102 is, for example, aluminum, copper, palladium, ruthenium, titanium nitride or tantalum nitride, and its formation method is, for example, magnetron DC sputtering, chemical vapor deposition or evaporation.

[0038] Next, referring to FIG. 1B , a plasma treatment process 104 is performed on the surface of the metal layer 102 . The plasma treatment process 104 is, for example, performed in-...

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Abstract

The present invention relates to a method for making metal-insulating layer-metal capacitor. Said method includes the following steps: firstly, forming a layer of first metal layer on the substrate, then making said first metal layer surface undergo the process of plasma treatment, then successively forming a layer of first oxide layer, a nitride layer and second oxide layer, and forming a layer of second metal layer on said second oxide layer, then defining second metal aleyr, second oxide layer, nitride layer, first oxide layer and first metal layer so as to form metal-insulating layer-metal capacitor.

Description

technical field [0001] The invention relates to a method for manufacturing a capacitor, in particular to a method for manufacturing a metal-insulating layer-metal capacitor. Background technique [0002] With the advancement of science and technology, the application of semiconductor components is becoming more and more widespread. For example, computers, communications and consumer electronics products require a large number of semiconductor components with different functions. Capacitor is one of the basic and important components, it has multiple functions such as noise decoupling and charge storage. Among various capacitors, especially Metal-Insulator-Metal (MIM) capacitors play an indispensable role in circuits such as mixed signal components and logic components. [0003] The existing manufacturing method of a metal-insulator-metal capacitor is as follows: firstly, a substrate is provided, and then a layer of metal layer is formed on the substrate as the lower electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/00H01L27/02H01L27/06H01L27/102H01L27/108H01L29/92H01L21/00H01L21/02H01L21/82H01L21/8222H01L21/8242H10B12/00
Inventor 林平伟巫金佳姜兆声
Owner UNITED MICROELECTRONICS CORP
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