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Methods of processing a substrate with minimal scalloping

An optimization and pressure technology, applied in the direction of circuits, processes for producing decorative surface effects, decorative arts, etc., can solve problems such as the influence of physical characteristics of synthetic devices

Inactive Publication Date: 2007-10-10
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This scalloping negatively affects the electrical and / or physical properties of the crafting device

Method used

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  • Methods of processing a substrate with minimal scalloping
  • Methods of processing a substrate with minimal scalloping
  • Methods of processing a substrate with minimal scalloping

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Embodiment Construction

[0022] The method achieves advantages in etching the sidewall profile of the substrate. Specifically, scalloping is minimized during etching of crystalline silicon substrates, epitaxial silicon, polysilicon, amorphous silicon, and other suitable layers.

[0023] Method: Determining Optimal Process Parameters

[0024] In general, the entire etching process may include multiple cycles (eg, tens, hundreds, or more) of deposition sub-processes and etching sub-processes. It is believed that rapid switching between the deposition sub-process and the etch sub-process helps to avoid or substantially reduce scalloping in the resulting etch profile. Furthermore, it is believed that adjusting the overall etch process such that the chamber pressures during the etch sub-process and the deposition sub-process are substantially equal or as close as possible can be very helpful in avoiding or substantially reducing scalloping in the resulting etch profile. texture.

[0025] In the followin...

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PUM

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Abstract

The present invention provides methods of processing a substrate with minimal scalloping. By processing substrates with minimal scalloping, feature tolerance and quality may be improved. An embodiment of the present invention provides a method for etching a feature in a layer through an etching mask by alternating steps of polymer deposition and substrate etching in any order. In order to achieve the benefits described herein, process gas pressures between process steps may be substantially equivalent. In some embodiments a continuous plasma stream may be maintained throughout substrate processing. In still other embodiments, process gases may be controlled by a single mass flow control valve so that process gases may be switched to within less than 250 milliseconds.

Description

technical field [0001] The present invention relates to a method and apparatus for obtaining features on a semiconductor wafer by etching through structures defined by a mask using plasma under controlled process conditions. More specifically, the present invention relates to a method and apparatus for reducing scalloping during plasma etching. Background technique [0002] Various methods have been disclosed for anisotropically etching silicon and polysilicon film materials including: difference, reactive ion etching (RIE), triode, microwave, inductively coupled plasma sources, and the like. In general, etching is the process of transferring a desired pattern or feature to a substrate by selectively removing a portion of the substrate. Substrate etching can be achieved by chemical or physical etching. Plasma etching is achieved by using chemical reactions and / or physical energy species with charged particles. That is, ions and other particles are generated in a vacuum ch...

Claims

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Application Information

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IPC IPC(8): B44C1/22H01L21/302
Inventor 塔玛拉克・潘杜姆索波尔恩
Owner LAM RES CORP
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