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A 'photosensitive dye/silicon' dual-layer structure with the infrared photo voltage effect

A technology of volt effect and photosensitizing dyes, applied in electrical components, circuits, semiconductor devices, etc.

Inactive Publication Date: 2007-10-17
CHENGDU AIFUSI MATERIAL SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is no report on the technology of converting infrared light into electrical energy through the photosensitive dye / silicon bilayer structure

Method used

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  • A 'photosensitive dye/silicon' dual-layer structure with the infrared photo voltage effect
  • A 'photosensitive dye/silicon' dual-layer structure with the infrared photo voltage effect
  • A 'photosensitive dye/silicon' dual-layer structure with the infrared photo voltage effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Cut a single-sided polished single-crystal silicon wafer [P-Si(111)] with a resistivity of 5-8Ω.cm into 10mm×10mm samples, wash and dry them, and conduct a series of reactions with relevant reagents [Semiconductor Optoelectronics, 1999, 20 (2): 143] A "photosensitive dye / P-Si" heterojunction with the following structure was obtained:

[0043]

[0044] This heterojunction is made into a sandwich structure In / photosensitive dye / P-Si, and its surface photovoltage is measured according to the method of the literature [Chemical Journal of Chinese Universities, 1991, 12 (4): 541] (the same below), and the surface photovoltage is 1.2× 10 4 μv(λ980nm).

Embodiment 2

[0046]Cut a single-sided polished single-crystal silicon wafer [N-Si(100)] with a resistivity of 5-9Ω.cm into 10mm×10mm samples, wash and dry, and carry out a series of reactions with relevant reagents [Chinese Science, (B Series) ), 1993, 23(2): 120] obtained a "photosensitive dye / n-Si" heterojunction with the following structure:

[0047]

[0048] This heterojunction was made into a sandwich structure In / photosensitive dye / N-Si, and its surface photovoltage was measured. The surface photovoltage was 2.6×10 3 μv(λ1090nm).

Embodiment 3

[0050] The α-Si:H film (thickness 3×10 3 A, glass as the substrate) is activated by low-temperature plasma and treated in ammonia water [Functional Materials, 1996, 27(5): 399] After reacting with related reagents, the "photosensitive dye / α-Si" with the following structure can be obtained Heterojunction:

[0051]

[0052] This heterojunction was made into an In / sensitizing dye / α-Si sandwich structure, and its surface photovoltage was measured. The surface photovoltage: 1.2×10 3 μv (λ940nm).

[0053] The silicon in the above "sensitizing dye / silicon" double-layer structure can be single crystal silicon (N type, P type), polycrystalline silicon (N type, P type) or amorphous silicon (N type, P type).

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Abstract

The invention discloses a 'photoactive dyestuff / siliconn' two-layer configuration with infrared photovoltaic effect, with a structure as the right formula, in which polymethin dyes direct chemistry covalent bond is joined to the surface of a single-crystal silicon, a polysilicon or an amorphous silicon to form an alloplasm junction of the two-layer configuration, thus the photovoltaic effect may be obtained in the wavelength range of the infrared light, which has important meanings in the application and theoretically.

Description

technical field [0001] The invention relates to a semiconductor material with photoelectric effect, especially a photosensitive dye / silicon double-layer structure made by chemically bonding a photosensitive dye on the surface of semiconductor silicon, which is a semiconductor material with infrared photovoltaic effect. Background technique [0002] Various optoelectronic devices made of semiconductor materials have long been widely used in many industries. However, there are still some problems in the photoelectric conversion efficiency and spectral response range of the existing semiconductor materials. In order to solve the above problems, dyes are immobilized on the semiconductor surface by physical methods such as evaporation and surface coating "-3". For example, Forrest et al. have proposed to deposit photosensitive dyes on the surface of single crystal silicon by vacuum deposition, and there are contact barriers "2, 5" at the interface between...

Claims

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Application Information

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IPC IPC(8): H01L31/0256
Inventor 张祖训郝纪祥张盛唐
Owner CHENGDU AIFUSI MATERIAL SCI & TECH
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