High-frequency circuit, high-frequency device and communications apparatus

A technology of high-frequency circuits and circuits, which is applied in the direction of circuits, electrical components, high-frequency amplifiers, etc., and can solve problems such as not being able to fully correspond to IEEE802.11n

Inactive Publication Date: 2007-10-31
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high-frequency circuits of WO2006 / 003959A and JP2002-208874A cannot fully support IEEE802.11n

Method used

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  • High-frequency circuit, high-frequency device and communications apparatus
  • High-frequency circuit, high-frequency device and communications apparatus
  • High-frequency circuit, high-frequency device and communications apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1、2 and comparative example 1

[0130] The low-noise amplifier circuits (Examples 1, 2, and Comparative Example 1) shown in FIG. 5 , FIG. 8 , and FIG. 23 each consist of circuit elements having constants shown in Table 1 below. Figure 20 shows their gain characteristics.

[0131] circuit components

[0132] In Comparative Example 1, the gain difference in the frequency band range from 2.4 to 5.85 GHz was as large as 5 dB, and the signal rise by ON / OFF control of the base voltage of the transistor was also 0.8 μsec. In Example 1, the gain increase on the low-frequency side of 1 to 2 GHz is suppressed, and at the same time, 12 dB or more is secured in the 2.4 to 5.85 GHz frequency band, and the gain difference is 2 dB or less. The ON / OFF control signal based on the base voltage of the transistor The rise is 0.1μsec. In Example 2 in which the inductance element LL2 is provided in the feedback circuit, the gain around 5 GHz increases, the gain difference is 1 dB or less, and the signal for ON / OFF cont...

Embodiment 3、4

[0134] In the high-frequency component (Example 3) having the high-frequency circuit shown in FIG. 1 without the variable notch filter circuit, a signal of -15dBm in the 2.4GHz band is input to the low-noise amplifier circuit, and from the receiving terminal of 5GHz Output 2 times wave of -30dBm. In contrast, in the high-frequency component (Example 4) having the high-frequency circuit shown in FIG. 10 provided with the variable notch filter circuit, the amount of harmonic generation output from the receiving terminal in the 5 GHz band is reduced. To -70dBm, deterioration of reception sensitivity can be prevented.

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Abstract

A high-frequency circuit comprising a switch circuit connected to an antenna terminal, first and second diplexer circuits connected to the switch circuit, first and second power amplifier circuits connected to the first diplexer circuit, first and second bandpass filter circuits connected to the first and second power amplifier circuits, a third bandpass filter circuit connected to the second diplexer circuit, a detection circuit disposed between the switch circuit and the first diplexer circuit, and a low-noise amplifier circuit disposed between the switch circuit and the second diplexer circuit.

Description

technical field [0001] The present invention relates to a high-frequency circuit that can be shared by at least two communication systems used for wireless communication between electronic and electric equipment, a high-frequency component having the high-frequency circuit, and a high-frequency component using the high-frequency component communication device. Background technique [0002] At present, data communication based on wireless LAN represented by IEEE802.11 standard has been widely used, for example, it is applied to PC peripheral equipment such as personal computer (PC), printer, hard disk, broadband router, FAX, refrigerator, standard TV (SDTV) ), high-definition televisions (HDTV), digital cameras, digital video cameras, mobile phones and other electronic equipment, signal transmission mechanisms in automobiles and aircraft, etc. [0003] As a wireless LAN standard, IEEE802.11a uses OFDM (Orthogonal Frequency Division Multiples: Orthogonal Frequency Division Mu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04B1/16H04B1/40H03F3/189H03F3/24H03F3/19H03H7/09H03H7/46H04B1/44H04B1/50
CPCH01L2224/05554H01L2224/48227H01L2224/49171H01L2924/19105
Inventor 深町启介釰持茂佐竹裕崇
Owner HITACHI METALS LTD
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