Optical approximate correction method and its photomask pattern

An optical approximation correction and photomask technology, which is applied in optics, microlithography exposure equipment, and originals for photomechanical processing, etc., can solve the problems of reducing device yield and improve yield, focus depth and energy The effect of increased margin, depth of focus, and increased energy margin

Inactive Publication Date: 2008-01-16
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
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  • Claims
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Problems solved by technology

The residue 130 will be transferred to the wafer substrate during etching and reduce the yield of the device

Method used

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  • Optical approximate correction method and its photomask pattern
  • Optical approximate correction method and its photomask pattern
  • Optical approximate correction method and its photomask pattern

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Embodiment Construction

[0064] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. The drawings are not intentionally drawn to scale, and therefore are not intended to limit the scope of protection of the claims of the present invention.

[0065] Optical interference and diffraction effects are bottlenecks in the reduction of critical dimensions of semiconductors. In general, for a particular wavelength, the resolution is that wavelength itself. For example, for a 248nm ultraviolet light source, its resolvable scale is only 248nm. With the help of the optimization of the optical system parameters, the resolution of the entire exposure machine can be greatly improved. For example, the off-axis illumination method is used to compress the first-order diffraction angle of the light passing through the mask, and the phase shift technology is used to change the phase of the pattern after the light passes through the mask. And ...

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Abstract

An optical approximate correction method comprises the following steps: graphs with prohibiting intervals are determined; indention convexes in complex number or rectangle convexes in complex number are formed on two sides of each graph with prohibiting distance; assistant scattering belts in complex number are inserted between the graphs with prohibiting intervals. A light mask pattern which is approximately corrected by optical method can form the graph with high resolution ratio, big focusing depth and big energy margin.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an optical approximation correction method in a photolithography process and a photomask pattern thereof. Background technique [0002] With the development of semiconductor technology towards small line width and high integration, higher requirements are put forward for the photolithography process. The optical exposure wavelength has also been developed from 365nm to 248nm, 193nm or even smaller, and the immersion exposure technology based on high refractive index medium has also been developed. As the size of the device shrinks, the size of the pattern on the photolithography mask is getting smaller and smaller, and the pitch of the pattern is getting closer and closer. Optical interference and diffraction effects make the resolution of the pattern transferred to the wafer less than ideal. Traditional binary masks can no longer meet the needs of deep submi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F1/14H01L21/00G03F1/36
Inventor 王谨恒杨坚
Owner SEMICON MFG INT (SHANGHAI) CORP
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