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Polishing solution used for polishing low-dielectric materials

A low-dielectric material and polishing liquid technology, applied in the field of polishing liquid, can solve the problems of low removal rate of low-dielectric material, difficult to control polishing selection, etc., to reduce surface contamination, no surface scratches, and improve product yield Effect

Inactive Publication Date: 2008-02-27
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a polishing solution for low dielectric materials with good surface finish in order to solve the problems that the removal rate of low dielectric materials is low and the polishing selection is difficult to control under lower pressure.

Method used

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  • Polishing solution used for polishing low-dielectric materials
  • Polishing solution used for polishing low-dielectric materials
  • Polishing solution used for polishing low-dielectric materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 10% of ordinary silica sol particles (70nm) and water balance compared with polishing solution 1, pH=11;

[0045] 10% of silica sol particles (100nm) and water balance used in the polishing liquid 1 patent, pH=11;

[0046] Silica sol particles (100nm) 5%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H used in the polishing liquid 2 patent 2 o 2 1.5% and water balance, pH=11;

[0047] The silica sol particles (100nm) 10%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H 2 o 2 1.5% and water balance, pH=11;

[0048] Silica sol particles (100nm) 10%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H 2 o 2 1.5%, polyacrylic acid or polypropylene salt (molecular weight is 5000) (PAA) 0.2% and water balance, pH=11;

[0049]Silica sol particles (100nm) 10%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H 2 o 2 1.5%, polyacry...

Embodiment 2

[0066] Polishing liquid 19 Aluminum-doped silicon oxide particles (45nm) 10%, 1-phenyl-5-mercapto-tetrazolium (PMTA) 0.01%, polyaminopolyether tetramethylenephosphonic acid (PAPEMP) 0.01% , persulfuric acid 0.1%, polyacrylic acid or polypropylene salt (molecular weight is 5000) 0.5% and water balance, pH=10.5;

Embodiment 3

[0068] SiO2 sol particles (80nm) 10%, 1-phenyl-5-mercapto-tetrazolium (PMTA) 0.5%, polyamino polyether tetramethylene phosphonic acid (PAPEMP) 0.1% used in the polishing liquid 20 patent , persulfuric acid 3%, polyacrylic acid or polypropylene salt (molecular weight is 5000) (PAA) 0.01% and water balance, pH=11.5;

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Abstract

The invention discloses a polishing liquid of low-dielectric material, which comprises the following parts: grinding material, water, one or more metal chelant, azole film former and oxidant. The invention has higher removing velocity of low-dielectric material and fitful polishing selecting rate of other materials, which displays good surface fineness after polishing.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a polishing liquid for polishing low dielectric materials. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. One planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture containing abrasives and a polishing pad to polish the surface of an integrated circuit. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load is used to exert pressure on the backside of the substrate. During polishing, the pad and stage are rotated while maintaining a downward force on the backside of the substrate to apply an abrasive and chemically active solution (commonly called a pol...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/31053H01L21/3212C09K3/1463
Inventor 宋伟红陈国栋荆建芬姚颖宋成兵
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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