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Micro-optical collector structure and manufacturing method thereof

A condensing lens and micro-bump technology, applied in optics, lenses, optical components, etc., can solve the problems of cracking, vulnerability to external environment, low hardness of organic materials, etc., and achieve the effect of reducing distance, reducing cost, and high anti-blocking ability.

Inactive Publication Date: 2008-03-05
UNITED MICROELECTRONICS CORP
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  • Abstract
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Problems solved by technology

[0008] Since the existing technology uses organic materials such as resins as micro-condensers, it cannot be used in high-temperature environments above 250°C, such as image sensors used in high-temperature environments or laser reading and writing devices for special purposes, otherwise cracks will occur , deformation and other issues
In addition, because organic materials have low hardness and are easily affected by factors such as the external environment, an additional protective layer must be formed on the micro-condenser in the prior art

Method used

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  • Micro-optical collector structure and manufacturing method thereof
  • Micro-optical collector structure and manufacturing method thereof
  • Micro-optical collector structure and manufacturing method thereof

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Embodiment Construction

[0042]Please refer to FIG. 3 to FIG. 8 . FIG. 3 to FIG. 8 are structural cross-sectional schematic diagrams illustrating in detail the steps of the manufacturing method of the first preferred embodiment of the present invention. As shown in FIG. 3 , the present invention firstly provides a substrate 100 with a dielectric layer 102 on the substrate 100 . Wherein, the substrate 100 is a semiconductor substrate, but not limited to a silicon wafer (wafer) or a silicon-on-insulator (SOI) substrate, and the substrate 100 may include a plurality of photosensitive structures 96, such as photodiodes (photodiodes). ), etc., are used to receive external light and sense the intensity of light, and these photosensitive structures are further electrically connected to a CMOS transistor (not shown) such as a reset transistor, a current draw element or a column selection switch, and a plurality of The insulator 98, such as shallow trench isolation (shallow trench isolation, STI) or local oxid...

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Abstract

This invention provides a method for manufacturing micro-condensers including: providing a base with at least one dielectric layer, forming a first film on the dielectric layer, etching said film to form at least one micro-convex block, forming a second film on the surfaces of the micro-convex block and the dielectric layer to form the micro-condenser with the convex block to be used in high temperature without processing an extra protecting layer.

Description

technical field [0001] The invention relates to a method for making a micro-condenser and its structure, in particular to a method for making a micro-condenser by an etching process and its structure. Background technique [0002] Complementary metal-oxide-semiconductor transistor image sensors (CMOS image sensors, CIS) and charge-coupled devices (charge-coupled devices, CCDs) are optical circuit components commonly used in the prior art to convert light into electronic signals. Both of them have a wide range of applications, including scanners, video cameras, and cameras, etc., but because charge-coupled devices are limited by price and volume, the complementary metal-oxide-semiconductor transistor image sensors currently on the market are relatively universal. [0003] Since the complementary metal-oxide-semiconductor transistor image sensor is produced by traditional semiconductor technology, it can greatly reduce the required cost and component size, and its application...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L27/146G02B3/00
Inventor 廖河松
Owner UNITED MICROELECTRONICS CORP
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