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Semiconductor device and its making method

A manufacturing method and semiconductor technology, applied in semiconductor devices, electric solid devices, capacitors, etc., can solve problems such as poor contact, achieve the effects of preventing film peeling, preventing hydrogen and moisture diffusion, and improving crystallinity

Inactive Publication Date: 2008-03-26
FUJITSU MICROELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, when a TiN film, or a laminated film of a Ti film and a TiN film used in general logic elements, etc., is used as a barrier layer, the reaction between the electrode material and the wiring material and the oxidation of the Ti film cannot be prevented. There may be problems such as poor contact

Method used

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  • Semiconductor device and its making method
  • Semiconductor device and its making method
  • Semiconductor device and its making method

Examples

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no. 1 approach

[0138] A semiconductor device and a manufacturing method thereof according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 6 . 1 is a cross-sectional view showing the structure of a semiconductor device according to the first embodiment of the present invention, and FIGS. 2 to 6 are cross-sectional views showing steps of a method of manufacturing the semiconductor device according to the first embodiment of the present invention.

[0139] First, the structure of the semiconductor device of the present embodiment will be described with reference to FIG. 1 . The semiconductor device of this embodiment is an FeRAM having a stacked memory cell structure.

[0140] For example, an element isolation region 12 defining an element region is formed on a semiconductor substrate 10 made of silicon. The semiconductor substrate 10 may be an n-type semiconductor substrate or a p-type semiconductor substrate. Wells 14 a and 14 b are formed in th...

no. 2 approach

[0216] A semiconductor device and a manufacturing method thereof according to a second embodiment of the present invention will be described with reference to FIGS. 8 to 11 . 8 is a cross-sectional view showing the structure of the semiconductor device according to this embodiment, and FIGS. 9 to 11 are cross-sectional views showing steps of a method of manufacturing the semiconductor device according to this embodiment. In addition, the same reference numerals are assigned to the same constituent elements as those of the semiconductor device and its manufacturing method of the first embodiment, and description thereof will be omitted or simplified.

[0217] The basic structure of the semiconductor device of this embodiment is substantially the same as that of the semiconductor device of the first embodiment. The semiconductor device of the present embodiment differs from the semiconductor device of the first embodiment in that the lower electrode 38 of the ferroelectric capac...

no. 3 approach

[0271] A semiconductor device and a manufacturing method thereof according to a third embodiment of the present invention will be described with reference to FIGS. 13 to 16 . 13 is a cross-sectional view showing the structure of the semiconductor device according to this embodiment, and FIGS. 14 to 16 are cross-sectional views showing steps of a method of manufacturing the semiconductor device according to this embodiment. In addition, the same code|symbol is attached|subjected to the same component as the semiconductor device and its manufacturing method of 1st and 2nd embodiment, and description is abbreviate|omitted or simplified.

[0272] The structure of the semiconductor device of this embodiment is substantially the same as that of the semiconductor device of the second embodiment. The semiconductor device of this embodiment differs from the semiconductor device of the second embodiment in that the wiring 72 connected to the upper electrode 44 of the ferroelectric capac...

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Abstract

A semiconductor device comprising an interlayer insulating film (30) formed over a semiconductor substrate (10) and a ferroelectric capacitor (46) which has a lower electrode (38) formed over the interlayer insulating film (30) and having a conductive film (36) of a noble metal or a noble metal oxide, a ferroelectric film (42) formed over the lower electrode (38), and an upper electrode (44) formed over the ferroelectric film (42), wherein the lower electrode (38) integrally has a plug portion (38a) buried in a contact hole (32a) made in the interlayer insulating film (30) and connected to source / drain regions (22a).

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a capacitor using a high dielectric thin film or a ferroelectric thin film as a dielectric thin film and a manufacturing method thereof. Background technique [0002] With the development of digital technology in recent years, the need for high-speed storage and processing of large-capacity data has been increasing, and semiconductor devices used in electronic equipment are required to be highly integrated and high-performance. In order to respond to such a request, such a technology has been extensively researched and developed. For example, in DRAM (Dynamic Random Access Memory: dynamic random access memory), in order to realize its high integration, iron is used as the dielectric film of the capacitor constituting the DRAM. Electrical materials, high dielectric materials. [0003] Ferroelectric Random Ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105
CPCH01L27/11507H01L28/65H01L28/55H01L27/11502H10B53/30H10B53/00H01L27/105
Inventor 王文生
Owner FUJITSU MICROELECTRONICS LTD
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