Doping method for silicon based rear earth doped luminescent material

Abstract

The invention provides a method for preparing silicon-based rare earth adulterated luminescent material and is characterized in that: the method comprises the following steps: step 1: silicon-based underlay material, or film on silicon-based underlay material is taken; step 2: A layer of silicon-based film including impurity is prepared on the underlay material or the film on the silicon-based underlay material through ion injection or deposition method; step 3: The silicon-based film material on the silicon-based material is crystallized by way of annealing and compound quantum dots containing impurity element are prepared at the same time; step 4: the rare earth ions are adulterated by way of ion injection; step 5: the rare earth ions are activated by way of annealing.

Description

technical field [0001] The invention relates to a preparation method of a rare earth doped luminescent material, in particular to a preparation method of a silicon-based rare earth doped luminescent material. Background technique [0002] Due to the indirect bandgap characteristics of silicon materials, the luminous efficiency is very low. It is expected that the doping of various impurity elements can effectively increase the luminescent properties of silicon-based materials. Among them, the doping of silicon-based rare earths has received special attention. [0003] In 1983 and 1985, German scientist Ennen reported on the American Applied Physics Letters that the method of ion implantation was used to achieve the doping of rare earth erbium ions in silicon-based materials and observed photoluminescence and electroluminescence from rare earth erbium ions (USA Applied Physics Letters, 1983 Vol 43 page 943 and 1985 Vol 46 page 381), triggered a worldwide upsurge in preparing ...

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Problems solved by technology

[0005] However, our study found that even with the above method, it is

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