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Doping method for silicon based rear earth doped luminescent material

A rare earth doped and luminescent material technology, applied in the field of rare earth doped luminescent material preparation, can solve the problem of difficulty in observing rare earth ion luminescent signals and the like

Inactive Publication Date: 2008-04-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] However, our study found that even with the above method, it is difficult to observe the luminescence signal from the rare earth ions

Method used

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  • Doping method for silicon based rear earth doped luminescent material
  • Doping method for silicon based rear earth doped luminescent material

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Embodiment Construction

[0024] The invention proposes a method for preparing a silicon-based rare earth-doped luminescent material that is fully compatible with the existing microelectronic technology. Nanoscale compound quantum dots are pre-generated in silicon materials, and the quantum dots can be used as preferential nucleation centers for subsequent ion implantation of doped rare earth ions. Then the doping of rare earth ions is realized by ion implantation. Subsequent annealing can activate the rare earth ions to achieve high density and high proportion of rare earth ion optical activation. Such materials and devices can be applied to silicon-based optoelectronic integration.

[0025] A lot of work has been done in the field of silicon-based rare-earth-doped luminescent materials in the world. Generally speaking, rare-earth ions and impurity ions are co-doped, and then one-step annealing is used to activate the rare-earth ions and allow the rare-earth ions to form complexes with the impurity i...

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Abstract

The invention provides a method for preparing silicon-based rare earth adulterated luminescent material and is characterized in that: the method comprises the following steps: step 1: silicon-based underlay material, or film on silicon-based underlay material is taken; step 2: A layer of silicon-based film including impurity is prepared on the underlay material or the film on the silicon-based underlay material through ion injection or deposition method; step 3: The silicon-based film material on the silicon-based material is crystallized by way of annealing and compound quantum dots containing impurity element are prepared at the same time; step 4: the rare earth ions are adulterated by way of ion injection; step 5: the rare earth ions are activated by way of annealing.

Description

technical field [0001] The invention relates to a preparation method of a rare earth doped luminescent material, in particular to a preparation method of a silicon-based rare earth doped luminescent material. Background technique [0002] Due to the indirect bandgap characteristics of silicon materials, the luminous efficiency is very low. It is expected that the doping of various impurity elements can effectively increase the luminescent properties of silicon-based materials. Among them, the doping of silicon-based rare earths has received special attention. [0003] In 1983 and 1985, German scientist Ennen reported on the American Applied Physics Letters that the method of ion implantation was used to achieve the doping of rare earth erbium ions in silicon-based materials and observed photoluminescence and electroluminescence from rare earth erbium ions (USA Applied Physics Letters, 1983 Vol 43 page 943 and 1985 Vol 46 page 381), triggered a worldwide upsurge in preparing ...

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Application Information

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IPC IPC(8): C09K11/79
Inventor 张建国王晓欣成步文余金中王启明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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