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Silicon single crystal manufacturing method and silicon wafer manufacturing method

A manufacturing method and technology of silicon single crystal, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of deterioration of light haze on the surface of epitaxial layer, insufficient dislocation removal effect, etc.

Active Publication Date: 2008-04-30
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when growing a silicon single crystal whose crystal axis orientation is [110], since the single crystal has a slip plane ({111} plane) in the same direction as the above-mentioned pulling axis direction, the effect of removing dislocations is not sufficient.
[0015] In addition, when the wafer surface is epitaxially grown using a silicon wafer with a (110) plane, there is a problem that the haze on the surface of the epitaxial layer deteriorates.

Method used

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  • Silicon single crystal manufacturing method and silicon wafer manufacturing method
  • Silicon single crystal manufacturing method and silicon wafer manufacturing method
  • Silicon single crystal manufacturing method and silicon wafer manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0079]A silicon single crystal was grown under the crystal growth conditions shown below, and the presence or absence of dislocations in the single crystal was examined. It should be noted that the number of pulled silicon single crystals was three regardless of the boron concentration in the silicon crystal or any level of the inclination angle of the seed crystal.

[0080] The boron concentration of the silicon seed is notated for convenience. "+" or "++" attached to p indicates that the dopant concentration (here, boron concentration) is high and the resistivity of the crystal is low, and "-" indicates the opposite meaning. Since there is no clear definition of dopant concentration and resistivity, P+ and P++ with increased dopant concentration are specifically defined as follows.

[0081] p+: Boron concentration 5×10 17 ~7×10 18 atom / cm 3

[0082] Resistivity 100~20mΩcm

[0083] p++: Boron concentration 7×10 18 ~2×10 20 atom / cm 3

[0084] Resistivity 20~0.8mΩcm ...

Embodiment 2

[0099] A silicon single crystal was grown under the same conditions as in Example 1 except that the neck length was changed to 400 mm. Table 6 shows the results of studies on the presence or absence of dislocations in silicon single crystals.

[0100] Table 6

[0101] Seed Tilt Angle

[0102] As shown in Table 6, by increasing the neck length, dislocation-free can be achieved even under the condition that dislocation-free can not be achieved at a neck length of 300 mm.

Embodiment 3

[0104] A single crystal was grown under the same conditions as in Example 1 except that the neck length was changed to 600 mm. The results of the study are shown in Table 7.

[0105] Table 7

[0106] Seed Tilt Angle

[0107] As can be seen from Table 7, by increasing the neck length, dislocation-free can be achieved even under conditions where dislocation-free can not be achieved in Examples 1 and 2. Examples 2 and 3 are characterized in that the growth of p+ crystals increases the success rate of dislocation-free growth by increasing the neck length. On the other hand, in the growth of p++ crystals, even if the neck length is increased, no dislocations are observed. The success rate of dislocations is improved. It can be seen that the higher the dopant concentration of the silicon melt, the smaller the improvement effect brought about by adjusting the inclination angle of the seed crystal.

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Abstract

Exemplary embodiments of the invention provide a method for producing a low-resistivity silicon single crystal in which a silicon wafer having a crystal axis orientation [110] can be obtained and dislocations are sufficiently eliminated, and a method for producing a low-resistance silicon wafer having the crystal axis orientation [110] from the silicon single crystal obtained by the low-resistivity silicon single crystal production method. In the silicon single crystal production method of the invention which employs a Czochralski method, the silicon single crystal whose center axis is inclined by 0.6 DEG to 100 relative to a-crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that a boron concentration ranges from 6.25x10<17 >to 2.5x10<20 >atoms / cm<3>, a center axis of the silicon seed crystal is inclined by 0.6 DEG to 10 DEG relative to the crystal axis [110], and the silicon seed crystal has the substantially same boron concentration as that of a neck portion formed in the single crystal grown from the silicon melt.

Description

technical field [0001] The present invention relates to a method for producing a silicon single crystal by the Czochralski method and a method for producing a silicon wafer using the silicon single crystal obtained by the method. Background technique [0002] The high evolution of integrated circuit elements (devices) of silicon semiconductors is rapidly progressing, and at the same time, the miniaturization of integrated circuits and the quality requirements of silicon wafers forming devices are becoming more and more stringent. Therefore, the presence of crystal defects such as dislocations and metal-based impurities in the so-called device active region forming the device is strictly limited. These are because they lead to increased leakage current and reduced carrier lifetime. [0003] On the other hand, power semiconductor devices have been used in applications such as power supply control in recent years. As substrates for power semiconductor devices, epitaxial silic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B15/36C30B29/06C30B15/02
Inventor 稻见修一井上邦春诸石学深川嗣也草场伸博
Owner SUMCO CORP
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