Non-volatile organic thin-film transistor memory based on floating gate structure and manufacturing method therefor

A non-volatile, organic thin-film technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., to reduce the chance of contamination, improve device performance, and good storage performance

Inactive Publication Date: 2008-05-14
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the flash memory technology that occupies the mainstream in the current storage field, that is, the floating gate structure organic thin film transistor memory has not yet seen patent applications and literature reports.

Method used

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  • Non-volatile organic thin-film transistor memory based on floating gate structure and manufacturing method therefor
  • Non-volatile organic thin-film transistor memory based on floating gate structure and manufacturing method therefor
  • Non-volatile organic thin-film transistor memory based on floating gate structure and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] First, the indium tin oxide on the indium tin oxide glass is photoetched into two electrodes (ie, source and drain electrodes) with a length of 10 mm and a width of 1 mm (ie, the channel width), and the distance between the electrodes is 20 microns (ie, the channel length ); then cleaned and blown dry with nitrogen. In a vacuum of 1 to 5 x 10 -4 In PA’s coating system, 70nm-thick pentacene, 25nm-thick nylon 6, 8nm-thick nickel, 200nm-thick nylon 6, and 150nm-thick special Fulong, and patterned through a mask, and finally a 100nm thick strip of aluminum with a width of 1 mm, patterned through another mask. The growth rate of pentacene film is controlled at 0.05 nanometers per second, the growth rate of nickel film is controlled at 0.02 nanometers per second, and the growth rate of nylon 6 and Teflon is controlled at 0.1 nanometers per second. Figure 3 shows the output characteristic curves of the organic thin film transistor storage device based on the floating gate st...

Embodiment 2

[0054] First, the indium tin oxide on the indium tin oxide glass is photolithographically formed into two electrodes (ie, source and drain electrodes) with a length of 10 mm and a width of 1 mm (ie, the channel width), and the distance between the electrodes is 100 microns (ie, the channel length ); then cleaned and blown dry with nitrogen. In a vacuum of 1 to 5 x 10 -4 In PA’s coating system, 70nm-thick pentacene, 25nm-thick nylon 6, 15nm-thick calcium fluoride, 200nm-thick nylon 6, 150nm-thick Teflon and patterned through a mask, and finally aluminum strips 100 nm thick and 1 mm wide, patterned through another mask. The growth rate of pentacene film is controlled at 0.05 nanometers per second, the growth rate of calcium fluoride film is controlled at 0.05 nanometers per second, and the growth rate of nylon 6 and Teflon is controlled at 0.1 nanometers per second. The device has obvious field effect characteristics, and the operating voltage of the device can be reduced to w...

Embodiment 3

[0056] First, the indium tin oxide on the indium tin oxide glass is photoetched into two electrodes (ie, source and drain electrodes) with a length of 10 mm and a width of 50 microns (ie, the channel width), and the distance between the electrodes is 1 micron (ie, the channel length ); then cleaned and blown dry with nitrogen. In a vacuum of 1 to 5 x 10 -4 In PA’s coating system, 50nm-thick pentacene, 2nm-thick Teflon, 2nm-thick nickel, and 100nm-thick Teflon are sequentially deposited on the source and drain electrodes of indium tin oxide, and the The stencil was patterned and finally the 80nm thick strip of aluminum with a width of 1mm was patterned through another mask. The growth rate of pentacene film is controlled at 0.05 nanometers per second, the growth rate of nickel film is controlled at 0.02 nanometers per second, and the growth rate of Teflon is controlled at 0.1 nanometers per second. The device has obvious field effect characteristics, and the operating voltage...

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PUM

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Abstract

The invention pertains to organic thin film transistorized memory based on floating gate structure. The manufacturing method adopts the top and bottom gate structures and the matched preparation process art respectively and introduces floating gate into medium layers between floating gate and control gate and realizes the nonvolatile memory of organic thin- film transistor. The invention has the advantages of simple process, low cost, small volume, low power dissipation and well stability.

Description

technical field [0001] The invention relates to a nonvolatile organic thin film transistor memory with a floating gate structure and a manufacturing method thereof. Background technique [0002] Non-volatile memory occupies an extremely important position in the current integrated circuit and storage fields. Among all kinds of non-volatile memories, the inorganic transistor memory based on the floating gate structure, the so-called flash memory technology, has made great contributions to the development of the global IC industry in the past ten years, and has gradually occupied the mainstream position in the storage field. It is widely used in the storage memory of computer hard disk, mobile hard disk, U disk and various electronic products. [0003] The successive inventions of organic electroluminescent devices (OLEDs), organic thin film transistors (OTFTs) and organic solar cells have demonstrated the great charm of organic semiconductors, which have a wide range of mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L27/28H01L51/40H01L21/84
Inventor 马东阁王伟林剑
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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