Unlock instant, AI-driven research and patent intelligence for your innovation.

Polishing composition

A technology of polishing composition and persulfate, applied in the field of polishing composition, can solve problems such as damage to the surface flatness of semiconductor devices and difficulty in forming multilayer wiring

Inactive Publication Date: 2008-05-28
FUJIMI INCORPORATED
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, since the recesses impair the surface flatness of the semiconductor device, it also makes it difficult to form multilayer wiring.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing composition
  • Polishing composition
  • Polishing composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-31 and comparative example 1-11

[0192] Various components shown in Table 1 were mixed with water to prepare polishing compositions of Examples 1-31 and Comparative Examples 1-11.

[0193] Table 1 shows the measurement results of the pH values ​​of the polishing compositions of Examples 1 to 31 and Comparative Examples 1 to 11.

[0194] When polishing a copper blanket wafer (copper blanket wafer) according to polishing condition 1 using each polishing composition of Examples 1-31 and Comparative Examples 1-11, the thickness of the copper blanket wafer before and after polishing was measured. The thickness of the sheet was measured using a sheet resistance machine "VR-120" manufactured by Kokusai Electric System Services Co., Ltd. From the measured thicknesses of the wafers before and after polishing, the thickness reduction amount of the wafers after polishing was calculated. The polishing speed was obtained by dividing the obtained thickness reduction by the polishing time, and the polishing speed was expre...

Embodiment 101~133 and comparative example 101~116

[0255] Each component shown in Table 2 was mixed with water to prepare each polishing composition of Examples 101-133 and Comparative Examples 101-116.

[0256] The pH values ​​of the polishing compositions of Examples 101 to 133 and Comparative Examples 101 to 116 were measured, and the results are shown in Table 2.

[0257] When the copper-clad sheet was polished using the polishing compositions of Examples 101-133 and Comparative Examples 101-116 according to polishing condition 1, the thickness of the copper-clad sheet before and after polishing was measured. The thickness of the sheet was measured with a sheet resistance machine "VR-120" manufactured by Kokusai Electric System Services Co., Ltd. The decrease in the thickness of the polished sheet was found from the measured thickness of the sheet before and after polishing. The polishing speed obtained by dividing the obtained thickness reduction amount by the polishing time is shown in the "polishing speed column" in Ta...

Embodiment 201~235

[0300] (Examples 201-235, Comparative Examples 201-214)

[0301] Each component shown in Table 3 was mixed with water to prepare polishing compositions of Examples 201 to 235 and Comparative Examples 201 to 214. The amount of the pH adjuster to be added to each polishing composition may be such that the pH of the polishing composition becomes the value shown in Table 3. In the polishing composition of Example 214, a mixture of potassium hydroxide and 0.03% by mass of ammonia water was added as a pH adjuster. In the polishing composition of Example 215, a mixture of potassium hydroxide and 0.5% by mass of ammonium carbonate was added as a pH adjuster.

[0302] When the copper-clad sheet was polished using the polishing compositions of Examples 201-235 and Comparative Examples 201-214 according to polishing condition 1, the thickness of the copper-clad sheet before and after polishing was measured. The thickness of the sheet was measured with a sheet resistance machine "VR-120...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

Description

[0001] This application is a divisional application based on the following Chinese patent application: [0002] Date of filing the original case: September 30, 2004 [0003] Original application number: 200410083441.9 [0004] Title of original application: Polishing composition technical field [0005] The present invention relates to a polishing composition used in polishing for forming, for example, wiring of a semiconductor device. Background technique [0006] Highly integrated and high-speed ULSI is required to be manufactured according to subtle design standards. In order to suppress an increase in wiring resistance due to the miniaturization of wiring in semiconductor devices, copper-containing metals have been used as wiring materials in recent years. [0007] Copper-containing metals have properties that make processing by anisotropic etching difficult. Therefore, the copper-containing wiring is formed...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18H01L21/304B24B37/00C09K3/14
CPCC23F3/04C09G1/02C09G1/18C09K3/1463H01L21/3212
Inventor 松田刚平野达彦吴俊辉河村笃纪酒井谦儿
Owner FUJIMI INCORPORATED