Central symmetry continuous diffraction element mask microstructure graph transfer method

Abstract

The present invention discloses a mask microstructure pattern transfer method for centrosymmetric continuous diffraction elements, which adopts a reactive ion beam etching method to transfer a centrosymmetric continuous microstructure pattern on a mask photoresist layer of a continuous diffraction optical element to the surface of a substrate. The present invention concretely comprises etching velocity ratio set, etching process parameter set, etching transfer and other steps. The present invention is automatic in the control of the whole process, stable in technology, good in repeatability, convenient to operate and high in product qualification ratio. As the reactive ion beam etching method is adopted for microstructure pattern transfer, the pattern transfer precision and the diffraction efficiency of corresponding diffraction elements are improved.

Description

technical field

[0001] The invention relates to a pattern transfer method, in particular to a method for transferring a centrally symmetrical continuous diffraction element mask microstructure pattern by means of a reactive ion beam etching method. Background technique

[0002] The application of continuous diffractive optical elements in optical systems is beneficial to reduce weight, reduce volume, simplify optical systems and improve imaging quality. At present, due to the limitation of production methods, most domestic research institutes can only produce binary optical elements, and the production technology of continuous diffractive optical elements has yet to be perfected, especially the continuous microstructure pattern transfer of continuous diffractive optical elements One of the difficulties of making. Contents of the invention

[0003] The purpose of the present invention is to provide a method for transfer of a centrosymmetric continuous diffraction element m...

Examples

Embodiment

[0018] (1) Set the etch rate ratio

[0019] During the production process of photoresist mask, the temperature of hard mold process will affect the etching rate and quality of microstructure pattern, so by measuring the optimal etching rate ratio, the appropriate hard mold temperature can be determined. When the hardening temperature is 80°C to 100°C, the photoresist has more organic solvent residues, the photoresist has poor etch resistance, and the etch rate is relatively low. When the hardening temperature is 130°C to 150°C, the organic solvent is effectively removed, the photoresist’s etching resistance is improved, and the etching ratio is increased. However, at this time, the photoresist’s surface shape, Make the photoresist delaminate, and even cause photoresist carbonization. When the hardening temperature is between 110°C and 130°C, the etching rate is stable and the etching surface is smooth. Therefore, when the hardening temperature is in the range of 110° C. to 1...

technical field

[0001] The invention relates to a pattern transfer method, in particular to a method for transferring a centrally symmetrical continuous diffraction element mask microstructure pattern by means of a reactive ion beam etching method. Background technique

[0002] The application of continuous diffractive optical elements in optical systems is beneficial to reduce weight, reduce volume, simplify optical systems and improve imaging quality. At present, due to the limitation of production methods, most domestic research institutes can only produce binary optical elements, and the production technology of continuous diffractive optical elements has yet to be perfected, especially the continuous microstructure pattern transfer of continuous diffractive optical elements One of the difficulties of making. Contents of the invention

[0003] The purpose of the present invention is to provide a method for transfer of a centrosymmetric continuous diffraction element m...

Examples

Embodiment

[0018] (1) Set the etch rate ratio

[0019] During the production process of photoresist mask, the temperature of hard mold process will affect the etching rate and quality of microstructure pattern, so by measuring the optimal etching rate ratio, the appropriate hard mold temperature can be determined. When the hardening temperature is 80°C to 100°C, the photoresist has more organic solvent residues, the photoresist has poor etch resistance, and the etch rate is relatively low. When the hardening temperature is 130°C to 150°C, the organic solvent is effectively removed, the photoresist’s etching resistance is improved, and the etching ratio is increased. However, at this time, the photoresist’s surface shape, Make the photoresist delaminate, and even cause photoresist carbonization. When the hardening temperature is between 110°C and 130°C, the etching rate is stable and the etching surface is smooth. Therefore, when the hardening temperature is in the range of 110° C. to 1...