Polysilicon capacitance coupling OTP device and method of manufacture

Abstract

The invention discloses a polysilicon capacitance coupling OTP device and the manufacturing method thereof. The OTP device comprises a memory transistor (8), a polysilicon floating gate and a PIP capacitance (9). The PIP capacitance replaces the transistor capacitance in the normal OTP structure, and the bottom electrode (6) of the PIP capacitance is taken as a floating gate to control a channel of the memory transistor, and the top electrode (7) of the PIP capacitance is taken as the control terminal of the floating gate. The invention adopts the PIP capacitance in the prior art, and after the layout design is changed, the PIP capacitance and a low voltage logic transistor constitute the OTP device together, and the invention can keep the original PIP process unchanged without making a high voltage junction especially required by OTP programming, thus realizing the embedded OTP device which has the advantages of simple structure, good programming effect and high reliability.

Description

technical field [0001] The invention relates to a design and manufacturing technology of a one-time programming device (OTP, One-Time-Programmable) in a semiconductor integrated circuit, in particular to a polysilicon capacitively coupled OTP device and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor integrated circuits (ICs), one-time programmable memory devices (OTP) are often used in many logic circuits and high-voltage process applications (such as LCD-Driver, RFID, Smart Card, etc.). And because the required OTP capacity is often relatively small, the industry hopes to achieve the effect of embedding OTP through device design without changing the existing process. The current OTP is basically realized by a structure similar to EEPROM or replaced by EEPROM. The disadvantage is that due to the complex process requirements of EEPROM and the proprietary module process, it is difficult to embed in ordinary logic ...

AI Technical Summary

Problems solved by technology

The current OTP is basically realized by a structure similar to EEPROM or replaced by EEPROM. The disadvantage is that due to the complex process requirements of EEPROM and the proprietary module process, it is difficult to embed in ordinary logic and high-voltage processes; there are also The process of using single-layer polysilicon to make OTP devices, but because OTP devices need to use high voltage when programming, most of them need to add some special processes, thereby increasing the complexity of the process and causing problems in device reliability.

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