Heterojunction bipolar transistor and preparation method thereof

Abstract

The invention relates to a heterojunction bipolar transistor, which comprises a substrate, a first doping type of collecting electrode area on the substrate, the collecting electrode area comprises a collecting area and a collecting electrode contact area; a second doping type of base electrode area on the collecting electrode area ; a first doping type of emitting electrode area on the base electrode area, an emitting electrode area comprises an emitting area andanemitting electrode cap layer area; the electrode on the emitting electrode cap layer area, the base electrode area and the collecting electrode contact area;, the first doping type is contrary to the second doping type; and the doping type of the ion injected into the outer base area is identical to the second doping type. In the invention the outer base area is adulterated by combining the wet-etching self-aligning process and the ion implantation process, the effect is as following that the base series resistance is reduced, simultaneously the thickness of the base ohmic contact area is increased, the adequacy of alloy is ensured, and the rate of finished products is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a heterojunction bipolar transistor structure. [0002] The present invention also relates to a preparation method of the aforementioned heterojunction bipolar transistor. technical background [0003] In recent years, due to the introduction of energy band engineering, heterojunction devices have performance advantages that cannot be replaced by homojunction devices, and have received widespread attention and rapid development. In particular, heterojunction bipolar transistors (HBTs) have the advantages of good threshold uniformity, single-supply operation, superior high-frequency performance, strong current drive performance, and good linearity, and have been widely used in the communication field. [0004] Currently prepared heterojunction transistors have various structures, including mesa structures, planar structures, and the like. There are also various preparation methods,...

AI Technical Summary

Problems solved by technology

In the prior art double-mesa HBT device, because the base region is relatively thin, punch-through is prone to occur during the formation of the metal electrode, resulting in device failure and seriously affecting the yield

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