The invention relates to a production process of silicon carbide titanium, which comprises the following steps of filling sponge titanium and monocrystalline silicon into a vacuum induction melting furnace, continuously heating until the sponge titanium and the monocrystalline silicon are remelted, and stopping vacuumizing, after argon is filled, conducting stirring, pouring and mold fixing, and acquiring a titanium-silicon alloy ingot, processing the titanium-silicon alloy ingot into titanium-silicon alloy powder, filling titanium-silicon alloy powder and graphite powder into a vacuum ball mill, adding an adhesive, ball-milling and mixing for 24 hours under the protection of argon, pressing into a round cake by using a press, filling into a crucible of a vacuum resistance furnace, vacuumizing, heating to 1100 DEG C, keeping the vacuum degree to 25 Pa, preserving the heat for 3.5 hours, continuously heating to 1350 DEG C, keeping the vacuum degree to 25-350 Pa, preserving the heat, fully alloying, filling argon, continuously heating to 1520 DEG C, and preserving heat for 3 hours to obtain a Ti3SiC2 block material. The method has the advantages of primary raw material taking, low cost, no need of deep processing, low temperature requirement in the whole reaction process, good product purity, and realization of large-scale industrial production.