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Metal film deposition method and film deposition device

A thin film deposition, metal film technology, applied in metal material coating process, ion implantation plating, coating, etc.

Inactive Publication Date: 2010-09-29
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the groove width is as small as about 100 nanometers, as described above, there is a possibility that particles scattered in a certain direction due to this feature are attached to the opposite wall surface to form deposition protrusions 118 on the opposite wall surface.

Method used

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  • Metal film deposition method and film deposition device
  • Metal film deposition method and film deposition device
  • Metal film deposition method and film deposition device

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Embodiment Construction

[0049] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0050] figure 1 is a schematic cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention. The thin film deposition apparatus of the present invention is an ICP (Inductively Coupled Plasma) type plasma sputtering apparatus. Such as figure 1 As shown in , the thin film deposition apparatus 32 includes a cylindrical processing container 34 made of, for example, aluminum. The processing container 34 is grounded. An outlet 38 is provided in the bottom 36 of the processing vessel 34 . The outlet 38 is connected via a throttle valve 40 to a vacuum pump 42 , whereby the interior of the process container 34 can be evacuated to generate a vacuum therein.

[0051] A disc-shaped mounting table 44 made of, for example, aluminum is placed inside the processing container 34 . An electrostatic chuck 46 is placed...

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Abstract

A metal film forming method is provided with a step of placing a subject, which is to be treated and has a recessed section formed on the surface, on a placing table in a treatment chamber; a step of exhausting the treatment chamber; a step of ionizing a metal target in an exhausted treatment chamber by plasma formed by bringing an inert gas into the plasma state, and generating metal particles including metal ions; and a step wherein a recessed ground portion is formed by grinding a bottom section of the recessed section by applying bias power on the subject placed on the placing table and pulling the plasma and the metal particles into the subject, and a metal film is formed over the entire surface of the subject including the surfaces in the recessed section and the recessed ground section.

Description

technical field [0001] The present invention relates to a thin film deposition method and a thin film deposition apparatus for efficiently depositing a metal film on the surface of a recess formed in the surface of an object to be processed, such as a semiconductor wafer. Background technique [0002] When manufacturing a semiconductor device, generally, various processes, such as thin film deposition process and pattern etching process, etc. are repeatedly applied to a semiconductor wafer, thereby manufacturing a desired device. In view of recent demands for higher integration and further miniaturization of semiconductor devices, their line widths and / or their apertures have become smaller and smaller. To accommodate this smaller size, the resistor must be smaller. Therefore, copper tends to be used as a wiring material and / or an embedding material because copper has a small resistivity and is inexpensive (see JP-A-2000-77365). When copper is used as a wiring material and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/285C23C14/34C23C14/14H01L21/768
CPCH01L21/2855H01L21/76843H01L21/76814H01L21/76805C23C14/345C23C14/3471H01L21/76844H01J37/321C23C14/046
Inventor 池田太郎水泽宁波多野达夫横山敦佐久间隆
Owner TOKYO ELECTRON LTD