Ultra-thin solar silicon slice and its cutting technology

A technology of solar-grade silicon wafers and cutting technology, which is applied in the field of solar cells, can solve the problems of easily damaged round edges of cylinders, failure to recycle and reduce the pass rate of finished products, etc., to achieve economic benefits, increase output, and improve The effect of production efficiency

Inactive Publication Date: 2008-08-13
江苏有则创投集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This cross-sectional solar-grade silicon wafer has the following disadvantages: First, the waste chips from the rolling process are powdery, which float in the air and pollute the environment, and cannot b...

Method used

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  • Ultra-thin solar silicon slice and its cutting technology
  • Ultra-thin solar silicon slice and its cutting technology
  • Ultra-thin solar silicon slice and its cutting technology

Examples

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Effect test

Embodiment 1

[0014] see figure 1 , figure 2 with image 3 Shown are the three-dimensional schematic diagram, front view and top view of the ultra-thin solar-grade silicon wafer. This embodiment is an ultra-thin solar-grade silicon wafer with a size of 125 mm×125 mm, which is composed of upper and lower parallel planes 2 and 3, and four corners 4 of which are four identical 45° chamfers. The distance between the upper and lower planes 2 and 3 is in the range of 165μm-195μm, the warpage is less than 75μm, and the surface is smooth, smooth and flawless.

[0015] see Figure 4 Shown is the schematic diagram of the ultra-thin solar-grade silicon wafer cutting process.

[0016] The processing method of this embodiment is to use a silicon crystal rod square machine to square and chamfer the silicon single wafer rod A=Φ156mm twice, and cut it into a square with a cross section of C=125mm and four identical corners. An octagonal square cylinder with a 45° chamfer and a distance between opposite sides ...

Embodiment 2

[0022] Embodiment 2 is an ultra-thin solar-grade silicon wafer with a size of 156mm×156mm. Its main body 1 is composed of upper and lower parallel planes 2 and 3, and its four corners 4 are four identical 45° chamfers. The distance between the upper and lower planes 2 and 3 is in the range of 165μm-195μm, the warpage is less than 75μm, and the surface is smooth, smooth and flawless.

[0023] The processing method of this embodiment is to use a silicon crystal rod squarer to square and chamfer the silicon single wafer rod A=Φ203mm twice, and cut it into a square with a cross section of C=156mm and four identical corners. An octagonal square cylinder with a 45° chamfer and a distance between opposite sides of B=195mm. The cutting process parameters for square rooting and chamfering are the steel line speed of 11 m / s and the workpiece speed of 700 μm / min.

[0024] After the square silicon rod is ultrasonically cleaned and dried with high-purity nitrogen, it is pasted on the glass pla...

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Abstract

The invention relates to an ultra-thin sun energy level silicon chip and cutting technology thereof which belongs to the solar cell field. The body of the ultra-thin sun energy level silicon chip is the square slice composed of upper and lower planes in parallel, the foursquare of the square slice is four same chamfer angle of 45 DEG. The distance of the upper and lower planes is in the scope of 165-195 um, the angularity is less than 75 um, and the surface of the plane is bright, flat and flawless. The ultra-thin sun energy level silicon chip cutting technology adopts a silicon wafer stick excavator to directly cut silicon wafer stick into octagonal square cylinder whose cross-section is square and foursquare is the same chamfer angle of 45 DEG, the cutting excess stock is lump which can be reused by scrap. It also adopts optimized cutting technology to cut into the ultra-thin sun energy level silicon chip on the multi-thread cutting machine so as to guarantee the manufacturing quality of the ultra-thin sun energy level silicon chip, improve productivity, and reduce the manufacturing cost of ultra-thin sun energy level silicon chip.

Description

Technical field [0001] The invention relates to an ultra-thin solar-grade silicon wafer and a cutting process thereof, and belongs to the field of solar cells. Background technique [0002] At present, solar-grade cell silicon wafers are cut from single-crystal round silicon rods. Domestic silicon crystal materials are scarce and expensive. With the widespread application of renewable energy, the market demand for solar-grade silicon wafers is increasing. The traditional solar silicon wafers currently commonly used internationally are square slices with rounded corners and a thickness of more than 200μm. The processing procedure of this solar-grade silicon wafer is: firstly, cut the round silicon rod into a square section. , The four corners are left with a cylindrical body with round edges of the billet, and then the round edges of the billet are rolled to the standard fillet size with a grinding wheel, and the grinding amount is about 2mm-4mm. This cross-sectional solar-grade s...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/18B28D5/00
CPCY02P70/50
Inventor 吴伟成毛和璜李云霞
Owner 江苏有则创投集团有限公司
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