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Thin-film transistor array substrate and manufacturing method thereof

A technology of thin film transistors and array substrates, applied in the field of thin film transistor array substrates and its manufacturing, can solve problems such as unfavorable increase in product yield and large area, and achieve the effects of thin appearance, reduced manufacturing costs, and increased manufacturing costs

Active Publication Date: 2008-09-03
NANJING CEC PANDA LCD TECH
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Problems solved by technology

In order to further reduce the number of masks used in the manufacturing process, a 3-pass mask process is proposed to manufacture TFT substrates. However, this 3-pass mask process requires the use of lift-off technology, and the lift-off technology is for TFT- For LCD, due to the large area, it is not suitable to increase the yield of the product

Method used

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  • Thin-film transistor array substrate and manufacturing method thereof
  • Thin-film transistor array substrate and manufacturing method thereof
  • Thin-film transistor array substrate and manufacturing method thereof

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Embodiment Construction

[0039] The method for manufacturing a thin film transistor array substrate according to the manufacturing embodiment of the present invention includes: a first photomask process, forming a first metal layer pattern on the substrate, the first metal layer pattern including scanning wiring, gates and scanning wiring terminals, common wiring and common electrodes. In the second photomask process, the data wiring, the source electrode and the drain electrode, the data wiring terminal, and the second conductive layer part of the common electrode are formed. The third photomask process is to form the pixel electrode pattern, and finally form the scanning wiring terminal, data wiring terminal and common wiring terminal pattern.

[0040] Such as figure 1 Figure 6 shows the specific steps of manufacturing the thin film transistor array substrate of the present invention:

[0041] Such as figure 1 As shown, the specific manufacturing method combined with Figure 2 to Figure 4 to ill...

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Abstract

The present invention discloses a thin-film transistor array substrate and manufacturing method thereof, the manufacturing method forms oxide or nitride at the channel position of the Ohm contact layer by using plasma treatment, thereby the passivation layer of the thin-film transistor is formed, then the pixel electric pole is directly deposited on the Ohm contact layer, the manufacturing method of the invention can save a light cover process, so the manufacturing process is simplified, and the cost is reduced. Furthermore, only one layer gate insulation layer is set for improving the storage capacitance between the pixel electric pole of the thin-film transistor array of the invention and the common electric pole.

Description

technical field [0001] The invention relates to a liquid crystal display device and a manufacturing method thereof, in particular to a thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] A liquid crystal display (liquid crystal display, LCD) is currently the most widely used type of flat panel display, and has the characteristics of low power consumption, thin appearance, light weight, and low driving voltage. Generally speaking, the display area of ​​LCD includes a plurality of sub-pixel areas, and each sub-pixel area is generally a rectangle defined by the intersection of two gate lines (gate line, also known as scan line) and two data lines (data line) or other The shape area is provided with a thin film transistor (TFT) and a pixel electrode inside, and the thin film transistor acts as a switching element. An active matrix liquid crystal display is formed by arranging TFTs in pixels, which is suitable for liquid crystal...

Claims

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Application Information

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IPC IPC(8): H01L21/84H01L21/768H01L21/336H01L27/12H01L23/522H01L29/786G02F1/1362
Inventor 李喜峰李俊峰
Owner NANJING CEC PANDA LCD TECH
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