Unlock instant, AI-driven research and patent intelligence for your innovation.

Three dimensional structure PZT capacitance and MOCVD preparing method thereof

A three-dimensional structure and capacitance technology, which is applied in the direction of capacitors, laminated capacitors, fixed capacitor parts, etc., can solve the problems of no patent reports and other issues

Inactive Publication Date: 2008-09-03
TSINGHUA UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no relevant patent report for the research on devices such as three-dimensional specific component PZT structure capacitors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three dimensional structure PZT capacitance and MOCVD preparing method thereof
  • Three dimensional structure PZT capacitance and MOCVD preparing method thereof
  • Three dimensional structure PZT capacitance and MOCVD preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] 1. Preparation of precursor solution

[0049] To prepare the precursor solution, it is necessary to consider the ratio of the three elements of lead (Pb), pick (Zr) and titanium (Ti) that is finally precisely controlled. A certain proportion of Pb, Zr, and Ti elements initially determined needs to undergo a complex state change from solid to liquid to gas and then to solid. In addition, due to the different deposition rates of Pb, Zr, and Ti elements, according to actual calculations, the Pb Among the three elements of , Zr and Ti, the deposition rate of Pb oxide is the fastest, the deposition rate of Ti oxide is the second, and the deposition rate of Zr oxide is the slowest. If the PZT film of 120 nanometers (nm) to 150 nanometers (nm) is prepared on single crystal Si, according to the molar concentration of solute 0.14 mole / liter (mol / L), THF30 milliliters (ml), tetra-ethylene glycol dimethyl Ether (Tetraethylene glycoldimethyl ether 99%, C 10 h 22 o 5 ) 4 millili...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
evennessaaaaaaaaaa
Login to View More

Abstract

A three dimensional structure PZT capacitance and a MOCVD manufacturing method belongs to the producing technology of the metallic oxide film capacitor, which is characterized in that the PZT thin film is made of Pb0.5(Zr1-xTix)0.5O3 film, wherein X=0.4, Pb 27%, Zr 55%, Ti 18%, the three dimensional structure PZT capacitance formed by the PZT thin film as medium layer with compacting conformation, more than 95% homogeneity, 1500 angstrom thickness, and the corresponding DLI-MOCVD method used for producing, the controlling parameter in every stage and the system parameters are raised.

Description

technical field [0001] The present invention relates to metal oxide films, metal-organic precursors and metal-organic chemical vapor deposition (MOCVD), in particular to ferroelectric memories and piezoelectric micro / nano devices with lead titanate (PZT) film materials and their three-dimensional structures Capacitive device fabrication technology. Background technique [0002] Pickaxe lead titanate (PZT) thin film is an oxide thin film structure with ferroelectric and piezoelectric properties, which is widely used. Ferroelectric materials are a kind of spontaneous polarization and its spontaneous polarization can change with the direction of the external electric field. Directional dielectric material, piezoelectric material refers to that when pressure is applied in a specific direction of certain crystals, positive or negative charges appear on the corresponding surface, and the charge density is proportional to the magnitude of the pressure. [0003] PZT is Pb(Zr 1-x T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/00H01L27/115H01L21/02H01L21/82H01L21/8247H01G4/33H01G4/08H10B69/00
CPCH01L21/02271H01L21/02197H01L28/55H01L28/90
Inventor 阮勇任天令谢丹刘理天杨景铭
Owner TSINGHUA UNIV