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Film-forming composition, method for pattern formation, and three-dimensional mold

A three-dimensional model, composition technology, applied in chemical instruments and methods, nanotechnology for information processing, photosensitive materials for optomechanical devices, etc.

Inactive Publication Date: 2008-09-10
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially the three-dimensional model with nano-scale concave-convex shape required now is extremely difficult

Method used

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  • Film-forming composition, method for pattern formation, and three-dimensional mold
  • Film-forming composition, method for pattern formation, and three-dimensional mold
  • Film-forming composition, method for pattern formation, and three-dimensional mold

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0070]

[0071] figure 1 A process diagram showing a pattern forming method using a photolithography technique which is the first embodiment of the present invention. In the first embodiment, including: coating process ( figure 1 (a)), the first baking process (not shown), exposure process ( figure 1 (b)), the second firing process (not shown) and the development process ( figure 1 (c1) and figure 1 (c2)). Each step will be described below.

[0072] [Coating process]

[0073] figure 1 (a) is a figure which shows the coating process of the pattern forming method of 1st Embodiment of this invention. The coating step refers to a step of coating the film-forming composition 2 of the present invention on the substrate 1 to obtain a coating layer of the film-forming composition 2 . The coating method may be a spray method, a roll coating method, a spin coating method, or the like.

[0074] The substrate material used in the present invention is not particularly limited. ...

no. 2 approach

[0090]

[0091] figure 2 Process diagrams showing a second embodiment of the present invention, that is, a method of forming a pattern having stepped unevenness. In the second embodiment, as in the first embodiment, a coating step (not shown), a first firing step (not shown), an exposure step ( figure 2 (a)~(d)), the second firing step (not shown) and the developing step ( figure 2 (e)).

[0092] The coating step, first firing step, and second firing step in the second embodiment can be performed in the same manner as in the first embodiment. The exposure process in the second embodiment ( figure 2 (a)~(d)) and developing process ( figure 2 (e)) for clarification.

[0093] [Exposure process]

[0094] The exposure process in the second embodiment includes the first exposure process ( figure 2 (a)~(b)) and the second exposure process ( figure 2 (c)~(d)). The first exposure step and the second exposure step are steps of performing exposures with different irradi...

Embodiment 1

[0159] 367.7 g (2.7 mol) of methyltrimethoxysilane, 411.0 g (2.7 mol) of tetramethoxysilane, 690.5 g of acetone, and 690.5 g of isopropanol were mixed and stirred. 340.2 g (19.0 mol) of water and 58.9 µL of 60% by mass nitric acid were added thereto, and further stirred for 3 hours to perform a hydrolysis reaction. The hydrolysis rate at this time was about 200%.

[0160] Next, it was made to react at 26 degreeC for 2 days, and the reaction solution containing a siloxane polymer was obtained. The weight average molecular weight (Mw) of the siloxane polymer in a reaction solution was 1956.

[0161] Using a mixed solution of acetone:isopropanol=1:1, the resulting reaction solution was prepared so that the mass percentage in terms of Si would be 7% by mass. Further, 51.4 g (0.189 mol) of a photobase generator (trade name: NBC-101, manufactured by Midori Kagaku) ​​represented by the following formula (B) was added to the prepared solution as a contrast enhancer to obtain a film-...

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Abstract

To provide a film forming composition capable of giving a pattern with an enhanced contrast by the irregularity of a film after development, and to provide a pattern forming method and a three-dimensional mold that use the same. The film forming composition is prepared by blending a compound capable of controlling the solubility of a film formed with respect to developer, in response to light and / or heat with a composition containing a hydrolyzate and / or a condensate of an alkoxy metal compound represented by Formula (A), wherein M is Si, Ge, Ti, Ta, In or Sn; R1is H or a monovalent organic group; R2is a monovalent organic group; and n denotes an integer of 1-3.

Description

technical field [0001] The present invention relates to a film-forming composition, a pattern forming method using the film-forming composition, and a three-dimensional model. More specifically, it relates to a film-forming composition capable of controlling at least one of light and heat to control the formed pattern, a pattern forming method using the film-forming composition, and a three-dimensional model. The solubility of the film in the developer enhances the contrast created by the unevenness of the developed film. Background technique [0002] Photolithography is the core technology for semiconductor device processing. With the recent increase in the integration of semiconductor integrated circuits (ICs), wiring has been further miniaturized. In particular, microfabrication lithography technology is required for a semiconductor integrated circuit (IC) called a Super Large Scale Integrated Circuit (Super LSI) whose integration level exceeds 10 million elements. [0...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075B81C5/00G03F7/004G03F7/32G03F7/38H01L21/027B81C99/00
CPCG03F7/0043B81C99/009B82Y10/00B82Y40/00G03F7/0002G03F7/0045G03F7/0757G03F7/203Y10T428/24802
Inventor 山下直纪石川清坂本好谦北条卓马
Owner TOKYO OHKA KOGYO CO LTD