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Thermal treatment method for reducing encapsulation angularity

A heat treatment method and warpage technology, which are applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of deformation of the encapsulant, mismatch of thermal expansion coefficients, difficult packaging steps, etc., and reduce the amount of deformation. Effect

Inactive Publication Date: 2008-09-24
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large difference in the thermal expansion coefficients of the encapsulant and the lead frame, the coefficient of thermal expansion does not match (CTE mismatch). Therefore, after the post-baking and curing steps, thermal stress will be generated between the encapsulant and the lead frame, making the cured Severe deformation and warpage of the encapsulant resulted in a reduction in the pass rate of the method and difficulties in subsequent packaging steps, such as the steps of electroplating the external terminals, electrical testing, and sawing the encapsulant, etc.

Method used

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  • Thermal treatment method for reducing encapsulation angularity
  • Thermal treatment method for reducing encapsulation angularity
  • Thermal treatment method for reducing encapsulation angularity

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Embodiment Construction

[0037] In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are described below in detail with accompanying drawings.

[0038] In this embodiment, the heat treatment method for reducing package warpage of the present invention is applied to a quad flat non-lead (QFN) package method. It should be noted that the present invention does not limit that the heat treatment method can only be applied to the quad flat no lead packaging method. In other embodiments, the heat treatment method can also be applied to other packaging methods of lead frame semiconductor package semi-finished products that need to reduce deformation or release stress to reduce warpage.

[0039] figure 1 It is a flow chart of heat treatment according to an embodiment of the present invention.

[0040] Figure 2A is a front view of a lead frame semiconductor package semi-finished product according to an embodiment of the pre...

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Abstract

The invention provides a heat disposal method, comprising the steps that: a wire frame typed semiconductor encapsulating semi-finished product is provided and a heating method is guided in. the wire frame typed semiconductor encapsulating semi-finished product comprises a wire frame and a sealed colloid. The wire frame comprises a plurality of encapsulating units which are wrapped by the sealed colloid. In the heating method, the built-in temperature and the peak temperature are provided. The temperature of the wire frame semiconductor encapsulating semi-finished product achieves the peak temperature from the built-in temperature after thermal reaction time; furthermore, the deformation quantity of the wire frame typed semiconductor encapsulating semi-finished product is reduced or the stress between the wire frame and the sealed colloid is released to reduce a warping degree; wherein, the peak temperature is set within 190-260 DEG C.

Description

technical field [0001] The present invention relates to a packaging method, and in particular to a heat treatment method for reducing package warpage. Background technique [0002] A conventional semiconductor package structure packaged with a lead frame has a plurality of external leads extending from the side of the encapsulant, and these external leads can be used for external electrical connection. In the leadless semiconductor package structure, the lower surfaces of the leads of the lead frame are exposed on the surface of the encapsulant as external connection terminals. Therefore, the leadless semiconductor package structure has a smaller footprint and size as well as a shorter electrical transmission path, so it meets the low-cost packaging requirements of high-frequency and small-sized integrated circuits. [0003] In the known leadless semiconductor package structure, the encapsulant is first formed on each package unit of the lead frame and the dicing lines arou...

Claims

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Application Information

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IPC IPC(8): H01L21/56
CPCH01L24/97H01L2224/97H01L2224/73265H01L2224/32245H01L2224/48247H01L24/73H01L2924/14H01L2924/351
Inventor 张云龙黄奕铭陈星豪
Owner ADVANCED SEMICON ENG INC