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Device for making a silicon ribbon or of other crystalline materials and manufacturing method

A technology of crystal materials and manufacturing methods, applied in the field of belt devices, can solve problems such as the inability to produce silicon wafer integration from liquid silicon

Inactive Publication Date: 2008-11-05
APOLLON SOLAR SAS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Furthermore, the production of silicon wafers from liquid silicon cannot be integrated into photovoltaic cell production lines according to the prior art methods

Method used

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  • Device for making a silicon ribbon or of other crystalline materials and manufacturing method
  • Device for making a silicon ribbon or of other crystalline materials and manufacturing method
  • Device for making a silicon ribbon or of other crystalline materials and manufacturing method

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0017] The device shown in FIG. 1 comprises a crucible 1 with a bottom 2 and side walls 3 . The crucible 1 comprises a transverse slit 4 placed horizontally in the bottom part of the right side wall in FIG. 1 . The transverse slit 4 has a width L (perpendicular to FIG. 1 ) of greater than 50 mm and preferably between 100 mm and 500 mm. The height H of the slit 4 is between 50 and 1000 microns. In this way, a strip R of crystalline material is obtained by controlled crystallization of the material output from the transverse slit 4 , the strip R being pulled as indicated by the arrow 5 in FIG. 1 . The crystal material is, for example, silicon (Si), germanium (Ge), gallium arsenide (GaAs), gallium phosphide (GaP), and the like.

[0018] The thickness of the strip R is determined by the height H of the slit 4 and the pulling rate. The higher the pulling rate, the more the thickness of the ribbon R is reduced. The width of the strip R is determined by the width L of the slit 4 ...

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Abstract

The invention concerns a device comprising a crucible (1) having a base (2) and side walls. The crucible (1) comprises at least one lateral slot (4) arranged horizontally at a lower part of the side walls (3). The lateral slot (4) has a width greater than 50 mm and, preferably, ranging between 100 mm and 500 mm. The height (H) of the slot (4) ranges between 50 and 1000 micrometers. The crystalline material exits the crucible through the lateral slot (4) so as to form a crystalline ribbon (R). The method includes a step of contacting a crystallization nucleus with the material exiting through the lateral slot (4) and a step of moving horizontally the ribbon (R).

Description

technical field [0001] The invention relates to a device for producing ribbons of crystalline material by controlled crystallization. Background technique [0002] Silicon solidification from a liquid silicon bath is generally obtained by controlled crystallization, ie migration of the solidification front (liquid / solid interface) from the initial solidified part, in particular the seed or the first layer crystallized by localized cooling. In this way, the solid silicon blocks gradually grow larger by drawing raw materials from the liquid silicon bath. The two methods traditionally used are the Czochralski method and the Bridgman method or their variants. According to the Tchaikrasky method, a seed, generally oriented with respect to the crystallographic axes of the solid silicon, is brought into contact with the melt and slowly pulled. The liquid silicon bath and the thermal gradient then remain unchanged, whereas, according to Bridgman's method, the silicon bath moves re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02E10/546Y10T117/1092H01L31/182Y02P70/50
Inventor 罗兰·艾因豪斯弗朗索瓦·利萨尔德休伯特·劳弗雷
Owner APOLLON SOLAR SAS