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Method for forming CMOS image sensor

A technology of image sensor and MOS transistor, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing dark current and photodiode without protective layer, so as to reduce dark current and prevent contamination Effect

Active Publication Date: 2008-11-12
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0011] The problem solved by the present invention is that after the formation of side walls in the prior art, the surface of the photodiode is exposed without a protective layer, which is easily contaminated by the photoresist layer in the ion implantation process and metal ions are formed on the surface, which will increase the dark current production

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  • Method for forming CMOS image sensor
  • Method for forming CMOS image sensor
  • Method for forming CMOS image sensor

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Embodiment Construction

[0025] The invention fully utilizes at least one layer of the first insulating layer forming the polysilicon gate sidewall in the peripheral circuit area to protect the surface of the photodiode, reduces the generation of dark current, and simultaneously does not increase the mask plate. The present invention also removes the first insulating layer remaining on the surface of the photodiode region after forming the side walls of the MOS transistors in the peripheral circuit region, and then forms a second insulating layer in the photodiode region to protect the surface of the photodiode region. Limit the protection scope of the present invention too much. The semiconductor substrate in this embodiment is a p-type silicon substrate, and may also be an n-type silicon substrate, a p- or n-type III-V compound semiconductor substrate, or silicon-on-insulator as the substrate. The protection scope of the present invention should not be limited too much.

[0026]A method for forming...

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Abstract

The invention relates to a method for forming a CMOS image sensor, which comprises the following steps: a semiconductor substrate with a first conductive type is provided and is divided into a photodiode area and a peripheral circuit area; the invention forms a second insulating layer for protection on the surface of the photodiode area after the technical step of forming a sidewall of the polysilicon gate of a MOS transistor to prevent the photo resist layer in the following ion implantation technology from contaminating and forming metal ions on the surface. Under the condition of no increase of mask, that is to say, no increase of technical complexity or technical cost, the forming method applies one or two layers which are used for forming the first insulating layer of the sidewall of the polysilicon gate as the second insulating layer of the photodiode area to protect the surface of the photodiode, thus reducing the generation of dark current.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a CMOS image sensor. Background technique [0002] At present, the charge coupled device (CCD) is the main practical solid-state image sensor device, which has the advantages of low read noise, large dynamic range, and high response sensitivity. (Complementary-Metal-Oxide-Semiconductor, CMOS) technology is compatible with the shortcomings, that is, it is difficult to realize single-chip integration with CCD-based image sensors. The CMOS image sensor (CMOS Image sensor, CIS) adopts the same CMOS technology, and can integrate the pixel cell array and peripheral circuits on the same chip. Compared with CCD, CIS has the advantages of small size, light weight, low power consumption, The advantages of convenient programming, easy control and low average cost. [0003] Dark current (Dark Current) is one of the problems faced by the CIS process. For a semic...

Claims

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Application Information

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IPC IPC(8): H01L21/822H01L27/146
Inventor 霍介光杨建平
Owner SEMICON MFG INT (SHANGHAI) CORP
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