Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

A magneto-resistance element and a manufacturing method technology, applied in the field of magneto-resistance elements, can solve problems such as reducing the MR ratio, and achieve the effect of high thermal stability

Active Publication Date: 2008-11-12
CANON ANELVA CORP
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Diffused manganese (Mn) is assumed to adversely affect the crystalline ferromagnetic pinned layer or the crystalline tunnel barrier layer and thus reduce the MR ratio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
  • Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
  • Magnetroresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0082] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Note that the constituent elements described in the embodiments are merely examples. The technical scope of the present invention is determined by the scope of the claims and is not limited by the following individual embodiments.

[0083] FIG. 1 is a cross-sectional view of a tunnel magnetoresistive element according to a first embodiment of the present invention.

[0084] By sequentially stacking the lower electrode layer 11, the antiferromagnetic layer 12, the first ferromagnetic pinned layer (first magnetization pinned layer) 13, the first nonmagnetic intermediate layer 14, and the second ferromagnetic pinned layer (second magnetization pinned layer) 15. The second non-magnetic intermediate layer (tunnel barrier layer) 16, the ferromagnetic free layer (magnetization free layer) 17 and the upper electrode layer 18 form the tunnel magnetoresisti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer.

Description

technical field [0001] The present invention relates to a magnetoresistive element such as a tunnel magnetoresistance element or a giant magnetoresistance element, a manufacturing method thereof, and a magnetic multilayer film manufacturing apparatus, and more particularly, to a magnetoresistance element such as a tunnel magnetoresistance element usable for a magnetic head of a magnetic disk drive or a magnetic random access memory. A magnetoresistance element of a resistance element or a giant magnetoresistance element, a manufacturing method thereof, and a magnetic multilayer film manufacturing apparatus. Background technique [0002] A magnetic head of a conventional disk drive uses a giant magneto-resistance element or a tunnel magneto-resistance element. [0003] The giant magnetoresistive element has an antiferromagnetic layer, a ferromagnetic pinned layer, a nonmagnetic conductive layer and a ferromagnetic free layer. The tunnel magnetoresistive element has an antife...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L43/08H01L43/12H01F10/32H01F41/14H01F41/18H01F41/22
Inventor 恒川孝二D·D·贾雅帕瓦拉
Owner CANON ANELVA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com