Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing SnO2-ZnO alloplasm nanobranch

A nano-branch technology, applied in the field of nano-oxide semiconductor material heterostructure preparation, can solve the problems of limiting the application of materials in nano-devices, no fixed direction, disorder, etc., and achieves pure appearance, good stability, Simple preparation method

Inactive Publication Date: 2008-12-17
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing prepared SnO 2 -ZnO heterostructure has shell structure (Weidong Yu, Xiaomin Li, Xiangdong Gao, and Feng Wu, J.Phys.Chem.B 2005, 109, 17078~17081), parallel nanoribbon structure (Jianwei Zhao, Changhui Ye, Xiaosheng Fang, Lirong Qin, and Lide Zhang, Crystal Growth and Design, 2006, 6, 2643~2647), etc. These nanostructures have no fixed direction and are disordered, which limits the application of materials in nanodevices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing SnO2-ZnO alloplasm nanobranch
  • Method for preparing SnO2-ZnO alloplasm nanobranch
  • Method for preparing SnO2-ZnO alloplasm nanobranch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The purity of the raw materials used are all 99.99%; SnO 2 The particle size of powder is 0.5um~100um, the particle size of graphite powder is 1um~30um, and the particle size of ZnO powder is 0.5um~100um. 0.1mol SnO 2 Powder and 0.5mol graphite powder are mixed and ground evenly, 0.1mol ZnO powder and 0.5mol graphite powder are mixed and ground evenly, put into two porcelain boats respectively, and porcelain boat one (0.1mol SnO 2 powder and 0.5mol graphite powder) were placed in the middle of the tube furnace, and the Al 2 O 3 The substrate is laid flat on the downstream side of the tube furnace at a distance of 5-20 cm from the middle of the furnace, as the substrate for the growth of nanowires; argon gas with a flow rate of 100 sccm and air with a flow rate of 10 sccm are introduced as carrier gas, the air pressure is maintained at 500 Pa, and the heating rate is maintained at 10℃ / min, keep at 800℃ for 60 minutes, then cool down naturally, take out Al 2 O 3 subs...

Embodiment 2

[0029] The purity of the raw materials used are all 99.99%; SnO 2 The particle size of ZnO powder is 0.5um~100um, the particle size of graphite powder is 1um~30um, the particle size of ZnO powder is 0.5um~100um, and 0.5mol SnO 2 The powder and 0.1mol graphite powder are mixed and ground evenly, 0.5mol ZnO powder and 0.1mol 2 powder and 0.5mol graphite powder) were placed in the middle of the tube furnace, and the Al 2O 3 The substrate is laid on the downstream side of the tube furnace at a distance of 5 to 20 cm from the middle of the furnace, as the substrate for the growth of nanowires; argon with a flow rate of 50 sccm and air with a flow rate of 5 sccm are introduced as the carrier gas, the air pressure is maintained at 50 Pa, and the heating rate is maintained at 30℃ / min, keep at 1000℃ for 30 minutes, then cool down naturally, take out Al 2 O 3 substrate. Push the porcelain boat with ZnO powder and graphite powder to the middle of the tube furnace, and remove the Al ...

Embodiment 3

[0031] The purity of the raw materials used are all 99.99%; SnO 2 The particle size of the powder is 0.5um~100um, the particle size of the graphite powder is 1um~30um, and the particle size of the ZnO powder is 0.5um~100um. 2 Powder and 0.5mol graphite powder are mixed and ground evenly, 0.1mol ZnO powder and 0.4mol graphite powder are mixed and ground evenly, put into two porcelain boats respectively, and porcelain boat one (0.1mol SnO 2 powder and 0.5mol graphite powder) were placed in the middle of the tube furnace, and the Al 2 O 3 The substrate is laid flat on the downstream side of the tube furnace at a distance of 5-20 cm from the middle of the furnace, as the substrate for the growth of nanowires; argon gas with a flow rate of 10 sccm and air with a flow rate of 2 sccm are introduced as carrier gas, the air pressure is maintained at 50 Pa, and the heating rate is maintained at 20℃ / min, keep it at 1000℃ for 60 minutes, then cool down naturally, take out the Al 2 O 3...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of the heterostructure preparation of nano oxide semiconductor materials, particularly relates to a method for preparing a heterogeneous SnO2-ZnO nano branch structure with a special morphology, and adopts a method that prepares the heterogeneous nano structure through two-step vapor phase deposition. An Al2O3 substrate is used as an underlay, and through gas transmission, the heterogeneous SnO2-ZnO nano branch structure is obtained by growing on the Al2O3 substrate using a two-step thermal evaporation method. The heterogeneous nano branch structure takes SnO2 as an axis and ZnO as a branch in the radial direction, and two adjacent ZnO nano wires in the radial direction form an angle between 68 and 73 degrees. The obtained heterogeneous nano branch structure has stable structural morphology, good quality and application prospect in the field of photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of heterostructures of nano-oxide semiconductor materials, in particular to the preparation of SnO with special morphology 2 - Method for ZnO Heterogeneous Nanobranch Structures. Background technique [0002] ZnO is an important semiconductor, piezoelectric, and photoconductive material with a wide bandgap (3.37 eV), which is widely used in field emission devices, solar cells, optoelectronic devices, and surface acoustic waveguides. SnO 2 It is a typical semiconducting metal oxide with a forbidden band width of 3.16eV (300K). SnO 2 One-dimensional nanostructures such as nanowires have high specific surface area due to their small size in two dimensions, and their chemisorption and catalytic capacity are significantly enhanced. novel features. Heterostructure of both, SnO 2 -ZnO nanoheterojunctions are expected to show some superior properties. It has unique optoelectronic properties and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/16C30B29/62C30B25/00B82B3/00C01G9/02C01G19/02
Inventor 师文生凌世婷
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI