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Single crystal substrate and cutting method thereof

A substrate and single crystal technology, applied in electrical components, impedance networks, etc., can solve problems such as performance degradation of SAW devices

Inactive Publication Date: 2008-12-24
LG INNOTEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, if the SAW device has a lower than desired value, the performance of the SAW device will be degraded accordingly

Method used

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  • Single crystal substrate and cutting method thereof
  • Single crystal substrate and cutting method thereof
  • Single crystal substrate and cutting method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0113] Figure 4 According to an embodiment of the present invention, when Euler angle φ=10 ° in the langasite substrate of the SAW device, the contour map of pfa; Figure 5 It is the contour map of tcd when the Euler angle φ=10°.

[0114] As shown, the point where pfa and tcd are simultaneously zero is at approximately θ = 23.6° and ψ = 78.8°.

[0115] Image 6 is a flowchart illustrating a method of simulating a single crystal substrate of a SAW device according to the present invention.

[0116] refer to Image 6 , the simulation method for a single crystal substrate is described below. The user first inputs the material and temperature constant of the single crystal, temperature, search range and Euler angles (S11).

[0117] Next, the user converts the constants from the crystallographic coordinate system to the work coordinate system (S12). Thereafter, the user searches for a solution to the dispersion equation for the body wave, namely V S1 , V S2 , V 1 (S13). ...

Embodiment approach 2

[0137] Figure 10 In the quartz substrate of the SAW device according to one embodiment of the present invention, the coupling coefficient (K 2 ) and the relationship between the first-order temperature coefficient of delay (tcd); Figure 11 Shown in the quartz substrate of the SAW device according to one embodiment of the present invention, when the Euler angle φ = 0 °, θ = θ ° (θ ° refers to any angle) and ψ = 0 ° when the open surface phase velocity ( Vo) and the relationship between the temperature coefficient of second-order delay (tcd2).

[0138] like Figure 10 and 11 As shown, the maximum value of the coupling coefficient corresponds to the Euler angle θ≈70°.

[0139] According to the parameter values ​​obtained from the simulation using Euler angles (0°, 70.5° and 0°), Vs(km / s)=3.205561, Vo(km / s)=3.208859, K 2 (%)=0.2056, pfa(deg)=0, tcd(ppm / C)=-27.78, tcd2(10 -9 / C 2 )=2.5308, and γ=1.214.

[0140] In order to use a SAW device as a temperature sensor and impr...

Embodiment approach 3

[0149] Figure 14 Shown in the lithium tantalate substrate of the SAW device according to one embodiment of the present invention, when the Euler angle φ = 0 °, θ = θ ° (θ ° refers to any angle) and ψ = 90 ° when the coupling coefficient ( K 2 ) and the relationship between the first-order temperature coefficient of delay (tcd); Figure 15 It is shown that in the lithium tantalate substrate of the SAW device according to one embodiment of the present invention, when the Euler angles φ=0°, θ=θ° (θ° refers to any angle) and ψ=90°, the open surface phase Relationship between velocity (Vo) and temperature coefficient of second-order delay (tcd2).

[0150] like Figure 14 and 15 As shown, the maximum value of the coupling coefficient depending on the first-order and second-order delay temperature coefficients corresponds to θ=79°.

[0151] According to the parameter values ​​obtained from the simulation using Euler angles (0°, 79° and 90°), Vs(km / s)=3.247331, Vo(km / s)=3.26343,...

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Abstract

Disclosed is a single crystal substrate and a cutting method thereof. A single crystal substrate includes a langasite substrate with a SAW propagation surface; and input and output IDTs having electrodes on the surface for launching and / or detecting surface acoustic waves, wherein a direction of surface wave propagation is parallel to an X'axis, and the substrate further has an Z'axis perpendicular to the surface and a Y'axis parallel to the surface and perpendicular to the X'axis, the langasite substrate having a crystal orientation defined by modified axes X, Y and Z, the relative orientation of axes X', Y' and Z' being defined by Euler angles phi, theta and psi; wherein, phi is equal to or greater than 5 DEG C below zero and equal to or less than 5 DEG C; theta is equal to or greater than 60 DEG C and equal to or less than 80 DEG C; psi is equal to or greater than 5 DEG C below zero and equal to or less than 5 DEG C; or phi is zero DEG C; theta is equal to or greater than 17 DEG C and equal to or less than 23 DEG C; psi is equal to or greater than 10 DEG C below zero and equal to or less than 20 DEG C.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of June 25, 2003, an application number of 03812150.6, and an invention title of "Single Crystal Substrate and Its Cutting Method". technical field [0002] The present invention relates to surface acoustic wave (SAW) devices, and more particularly to single crystal substrates with optimized parameter characteristics obtained by providing optimal cut orientations of single crystal substrates used in SAW devices and methods for cutting them. technical background [0003] In recent years, demand for mobile communication terminals as wireless communication devices, such as car phones, mobile phones on trains and on the streets, has risen sharply around the world. To make mobile communication possible, both the network system itself and the terminals directly connected to users need to be small in size, light in weight, low in power consumption and high in performance. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/00
CPCH03H9/00H03H9/02039H03H9/0259H03H9/02614
Inventor 瓦连京·切列德尼克德弗舍尔斯托夫·米哈伊尔崔用林
Owner LG INNOTEK CO LTD
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