Microstructure resonant beam pressure sensor

Abstract

The invention provides a micro-structure resonant beam pressure sensor, comprising an upper silicon slice and a lower silicon slice which are formed by linkage, wherein the upper silicon slice comprises a rectangular frame and two symmetrical peninsulas arranged in the rectangular frame; two groups of resonant beams which are made of titanium nitride and arranged side by side have two ends connected with the two peninsulas respectively; each resonant beam is respectively provided with a lead wire and a excitation resistance and a sensing resistance which are connected with electrodes; the lower silicon slice adopts a structure with an O-shaped frame, in which a pressure film arranged. In the invention, the titanium nitride is used as the resonant beams of the pressure sensor, and the titanium nitride has very high natural resonance frequency, the precision of the resonant type pressure sensor is greatly improved due to the use of the titanium nitride resonant beams. The measuring precision can be improved by increasing the natural resonance frequency, because higher the natural resonance frequency is, the bigger movement the corresponding zero pressure frequency has (the precision of the sensor is the specific value of the frequency instability and the movement of the corresponding zero pressure frequency) , and higher the measuring precision of the pressure is.

Description

technical field [0001] The invention relates to a miniature pressure sensor, in particular to a microstructure resonant beam pressure sensor capable of improving the precision of the miniature pressure sensor. Background technique [0002] The development of Micro Electro Mechanical Systems (MEMS for short) technology and the gradual maturity of processing technology have made it possible to develop MEMS sensors with high integration, low cost, light weight, small size and low power consumption. Become the trend of future sensor research. [0003] For micro-resonant pressure sensors, the external pressure to be measured does not directly act on the resonator, but indirectly changes the stiffness of the resonator through the pressure film, thereby changing the resonant frequency of the beam, so the change of the resonant frequency of the beam can be detected To achieve the purpose of detecting the external pressure, it belongs to the principle of secondary sensitivity. Its ...

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Problems solved by technology

But at present, the highest accuracy in China is far from reaching this accuracy, the main reason is that the beams are made of silicon or silicon compounds, and their

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