Method for monitoring base mounting centralization of germanium silicon epitaxial reaction cavity

Abstract

The invention discloses a method for monitoring the base installing centralization of a germanium-silicon epitaxial reaction chamber, which adopts the following steps after installing the base: depositing a layer of polycrystalline germanium-silicon film on a silicon chip, taking points with a constant interval from a plurality of endless belts which have the equal distance with the center position of the base, measuring the thickness of the polycrystalline germanium-silicon film on each of the points, judging whether the thickness of the polycrystalline germanium-silicon film on each of the endless belts which have the equal distance with the center position of the base is homogeneous, if the thickness is homogeneous, the installation of the base is judged to be centralized, otherwise, the base needs to be renewedly installed through opening the chamber. The method is simple and can prevent the renewed preventive maintenance and service of the germanium-silicon chamber which is caused by the not centralized installation of the base.

Description

technical field [0001] The invention relates to a PM (Preventive Maintenance) method for a silicon germanium cavity, in particular to a method for monitoring the installation centralization of a silicon germanium epitaxy reaction chamber base. Background technique [0002] As shown in Figure 1, it is a silicon germanium cavity structure, the center is the base, and the outermost ring is the gas preheating ring. There is a certain gap between the two. The gas flows into the cavity in two ways, one is the main hydrogen (Main H2 ) and process gas, which flow in from the gas inlet, that is, from the side of the susceptor, and the other way is bypass hydrogen (Slit H2), which enters from the bottom of the susceptor, and then flows into the chamber from between the susceptor and the gas preheating ring . [0003] As shown in Figure 2, the PM process of the existing germanium-silicon cavity is usually carried out as follows: first, the cavity parts are cleaned and installed, and t...

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Problems solved by technology

[0004] In the above process, due to the lack of an effective method to centrally confirm the position of the base, if the thickness uniformity of the germanium silicon is not distributed in a ring after the whole process is over, but one side is thick and the other is thin, then the base is required. Centralization and level adjustment, which will lead to changes in the temperature distribution of the cavity, so that the thickness and uniformity of silicon germanium will be completely changed, and almost all the previous processes will need to be re-adjusted. Usually, this period of time will take about 3 days.

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