Method for removing photoresist

A photoresist and cleaning solution technology, applied in photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc. Reduce the effect of dilution

Inactive Publication Date: 2009-01-28
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the method described, the concentration of sulfuric acid drops sharply after the injection of hydrogen peroxide, so that the service life of the cleaning solution formed is shortened, and the cleaning solution reacts with the photoresist and is directly discharged as waste liquid, which increases the cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing photoresist
  • Method for removing photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] In the semiconductor integrated circuit process, the photoresist is spin-coated on the surface of the semiconductor substrate through the photolithography process to define the area to be etched or ion implanted; after the etching or ion implantation is completed, the photoresist on the surface of the semiconductor substrate needs be removed. The invention provides a method for removing a photoresist layer.

[0039] In the method for removing photoresist of the present invention, at first, provide sulfuric acid solution, this sulfuric acid solution is used as the cleaning solution of removing photoresist;

[0040] Next, periodically inject hydrogen peroxide into the sulfuric acid solution to form a cleaning solution containing sulfuric acid and hydrogen peroxide;

[0041] Periodically inject hydrogen peroxide into the cleaning sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a photoresist removing method which comprises the following steps of providing a sulfuric acid solution; adding hydrogen peroxide into the sulfuric acid solution periodically to form the washing liquid containing the sulfuric acid and the hydrogen peroxide; spraying the washing liquid on the photoresist of a semiconductor substrate to remove the photoresist. The method can prolong the service life of the washing liquid.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing photoresist. Background technique [0002] In the manufacture of semiconductor integrated circuits, the photoresist layer is spin-coated on the semiconductor substrate through the photolithography process, and the etching or ion implantation area is defined after the photoresist layer is exposed and developed, and after the etching or ion implantation is completed , removing the photoresist on the semiconductor substrate. [0003] Commonly used photoresist removal methods include dry plasma etching and wet cleaning. [0004] US Patent No. US 6,630,406 discloses a method for removing photoresist by dry plasma etching. In the dry plasma etching process, the method of generating plasma acts on the working gas, such as oxygen, hydrogen or fluorine-containing gas, by using an excitation source such as microwave or radio frequency to ionize t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42G03F7/26H01L21/311
Inventor 刘佑铭
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap