Method for removing photoresist

A photoresist and cleaning solution technology, applied in photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc. Reduce the effect of dilution
CN101354542AInactive Publication Date: 2009-01-28SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2009-01-28
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The invention discloses a photoresist removing method which comprises the following steps of providing a sulfuric acid solution; adding hydrogen peroxide into the sulfuric acid solution periodically to form the washing liquid containing the sulfuric acid and the hydrogen peroxide; spraying the washing liquid on the photoresist of a semiconductor substrate to remove the photoresist. The method can prolong the service life of the washing liquid.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing photoresist. Background technique

[0002] In the manufacture of semiconductor integrated circuits, the photoresist layer is spin-coated on the semiconductor substrate through the photolithography process, and the etching or ion implantation area is defined after the photoresist layer is exposed and developed, and after the etching or ion implantation is completed , removing the photoresist on the semiconductor substrate.

[0003] Commonly used photoresist removal methods include dry plasma etching and wet cleaning.

[0004] US Patent No. US 6,630,406 discloses a method for removing photoresist by dry plasma etching. In the dry plasma etching process, the method of generating plasma acts on the working gas, such as oxygen, hydrogen or fluorine-containing gas, by using an excitation source such as microwave or radio frequency to ionize t...

Claims

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