Method for preparing high-temperature electrolytic capacitor anodized film

A technology of anodic oxidation film and high-temperature electrolysis, which is applied in the direction of anodic oxidation, capacitor electrodes, capacitor parts, etc., can solve the problems of output waveform distortion, capacitor failure, and circuit failure, so as to enhance the ability to withstand high temperature and improve Effects on Reliability and Stability

Active Publication Date: 2009-01-28
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The operating temperature range of tantalum electrolytic capacitors manufactured by this traditional method is generally lower than 125°C, while in industries such as oil drilling, geological exploration, and space vehicles, the operating environment temperature of equipment is usually much higher than 125°C, so capacitors are often affected by environmental factors. If the temperature is too high, it will fail, resulting in distortion of the output waveform, malfunction of the circuit, and even damage to the equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] ① Immerse the valve metal anode in a phosphoric acid solution with a concentration of 0.1% by volume at 70°C, and supply direct current for 60 minutes; the voltage of the direct current is 1.5 times the working voltage of the capacitor, and the boosted current density is 10mA / g;

[0022] ②Take out the valve metal anode, wash it in deionized water at 60°C, and dry it;

[0023] ③ immerse the dried valve metal anode in a phosphoric acid solution with a volume percentage concentration of 2% at 140°C for secondary high-temperature oxidation treatment, and feed direct current according to the method of step ①;

[0024] ④Take out the anode after the secondary high-temperature oxidation treatment, wash and dry according to the method in step ②.

Embodiment 2

[0026] Each step is the same as Example 1; wherein, the temperature of the phosphoric acid solution in step 1. is 90°C, the concentration is 1%, the voltage is 2 times of the working voltage of the capacitor, the boost current density is 80mA / g, and the power-on time is 240 minutes; The deionized water in step ② is 80°C; the temperature of the phosphoric acid solution in step ③ is 170°C, the concentration is 10%, and the parameters of direct current are the same as in step ①.

Embodiment 3

[0028] Each step is the same as Example 1; wherein, the temperature of the phosphoric acid solution in step 1. is 80°C, the concentration is 0.55%, the voltage is 1.7 times of the working voltage of the capacitor, the boost current density is 45mA / g, and the power-on time is 150 minutes; The deionized water in step ② is 70°C; the temperature of the phosphoric acid solution in step ③ is 155°C, the concentration is 6%, and the parameters of direct current are the same as in step ①.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method for an anodic oxide film of a high-temperature electrolytic capacitor, which belongs to a capacitor manufacturing method. The invention aims at providing a manufacturing method for a capacitor capable of bearing a higher operating temperature. The method comprises the following steps of: dipping an anode into a phosphoric acid solution with a temperature of 70-90 DEG C and a volume percentage concentration of 0.1-1 percent, and applying a direct current with a voltage 1.5-2 times of the operating voltage of the capacitor and a boosting current density of 10-80mA/g for 60-240 minutes; taking the anode out, cleaning the anode in deionized water with a temperature of 60-70 DEG C, and drying the anode; dipping the anode into a phosphoric acid solution with a temperature of 140-170 DEG C and a volume percentage concentration of 2-10 percent for secondary high temperature oxidation treatment, and applying a direct current; and taking out the anode which undergoes the secondary high temperature oxidation treatment, and drying the anode. The electrolytic capacitor which can still work normally in a hot environment with a temperature of 200 DEG C is an indispensable electronic element in a power filter circuit.

Description

Technical field: [0001] The invention relates to a method for manufacturing an electrolytic capacitor, in particular to a method for preparing an anodic oxide film of an electrolytic capacitor. Background technique: [0002] Electrolytic capacitors are one of the most widely used electronic components. At present, the manufacturing method of tantalum electrolytic capacitors is: immerse the anode tantalum block sintered in high temperature vacuum in acidic aqueous solution for electrochemical treatment, so that a layer of tantalum pentoxide working dielectric film is formed on the surface of the anode tantalum block, and then the anode The tantalum block is put into a metal shell filled with liquid or gel working electrolyte for welding and packaging, and finally the anode lead wire is welded. The operating temperature range of tantalum electrolytic capacitors manufactured by this traditional method is generally lower than 125°C, while in industries such as oil drilling, geo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/04C25D11/02
Inventor 蒋春强陈刚肖毅刘廷正
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap