Interpenetrating network for chemical mechanical polishing

A chemical-mechanical, interpenetrating network technology, applied to surface polishing machine tools, machine tools suitable for grinding workpiece planes, grinding/polishing equipment, etc., can solve the problem of not showing large void volumes
CN101367204AActive Publication Date: 2009-02-18ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
Publication Date
2009-02-18

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Abstract

Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continous non-fugitive phase and a substaintially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.
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Description

technical field

[0001] The present invention relates generally to the field of polishing pads for chemical mechanical polishing. In particular, the present invention relates to a chemical mechanical polishing pad having a polishing structure useful for chemical mechanical polishing of magnetic, optical, and semiconductor substrates. Background technique

[0002] In the manufacture of integrated circuits and other electronic devices, layers of conductive, semiconducting, and dielectric materials need to be deposited on and removed from the surface of semiconductor wafers. remove. Thin layers of conductive, semiconducting, and dielectric materials can be deposited using several deposition techniques. Common deposition techniques in modern wafer processing include physical vapor deposition (PVD) (also known as sputter coating), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating, among others . Common removal techn...

Claims

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