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Flash memory unit structure and preparation thereof

A flash memory cell and manufacturing method technology, applied in electrical components, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve the problems of threshold voltage drift, large grain size, poor ability to store charges, etc., and achieve the suppression threshold The effect of voltage drift

Active Publication Date: 2009-02-18
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the use of discrete atomic islands of metal materials seriously affects the performance of semiconductor devices and integrated circuits, resulting in a decline in the yield of the production line
[0011] In summary, in the prior art, the SONOS structure will produce a threshold voltage drift phenomenon during the operation of the device, which affects its further application; using nanocrystals as the charge storage structure of the flash memory structural unit can solve the problem of threshold voltage drift , but the disadvantage is that the grain size is large and the ability to store charges is poor; the discrete atomic islands made of metal materials are used as the charge storage structure, and the ability to store charges is better than that of nanocrystals, which can also avoid the problem of threshold voltage drift, but it will bring contamination by metal ions

Method used

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  • Flash memory unit structure and preparation thereof
  • Flash memory unit structure and preparation thereof
  • Flash memory unit structure and preparation thereof

Examples

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Embodiment 1

[0040] This embodiment provides a flash memory unit structure. Reference attached figure 2 As shown, it includes a semiconductor substrate 101, a first dielectric layer 102 on the semiconductor substrate 101, a charge storage layer 103 on the first dielectric layer 102, a second dielectric layer 105 on the charge storage layer 103, and a The first dielectric layer 102 / charge storage layer 103 / second dielectric layer 105" gate 106 on the three-layer stack structure, and the semiconductor substrate 101 located in the "first dielectric layer 102 / charge storage layer 103 / second dielectric layer The source electrode 107 and the drain electrode 108 on both sides of the 105" triple-layer stack structure. The charge storage layer 103 includes non-metal discrete atomic islands 104 .

[0041] In this example, the semiconductor substrate 101 can be various semiconductor materials well known to those skilled in the semiconductor field, including silicon or silicon germanium (SiGe) with...

Embodiment 2

[0057] This embodiment provides a method for manufacturing a flash memory cell structure. Reference attached image 3 The flow chart of the implementation is shown. Step S201, forming a first dielectric layer on the semiconductor substrate; Step S202, forming a charge storage layer on the first dielectric layer, including non-metal discrete atomic islands; Step S203, forming a second dielectric layer on the charge storage layer; Step S204, annealing; step S205, forming source and drain electrodes on both sides of the three-layer stack structure composed of the first dielectric layer / charge storage layer / second dielectric layer; step S206, forming a gate on the three-layer stack structure pole.

[0058] Figure 4 to Figure 8 It is a structural schematic diagram of an embodiment of forming a flash memory cell structure in the present invention. Such as Figure 4 As shown, a first dielectric layer 202 is formed on a semiconductor substrate 201 .

[0059] In this example, re...

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Abstract

A flash memory unit structure comprises a semiconductor substrate, a first dielectric layer positioned on the semiconductor substrate, an electric charge storage layer positioned on the first dielectric layer, a second dielectric layer positioned on the electric charge storage layer, and a grid positioned on a three-layer stacked structure composed of the first dielectric layer / the electric charge storage layer / the second dielectric layer, as well as a source and a drain positioned at the two sides of the three-layer stacked structure in the semiconductor substrate, wherein, the electric charge storage layer comprises a nonmetallic discrete atom island. The invention also provides a manufacturing method of the flash memory unit structure. The invention can effectively restrain drift of a threshold voltage, can improve the electric charge storage ability of the flash memory structure unit, and can avoid the problem of the pollution of metal ions caused by using a metal material.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a flash memory unit structure and a manufacturing method thereof. Background technique [0002] A flash memory (Flash Memory) device is currently one of the devices widely used in the field of large-scale integrated circuits. As a kind of semiconductor memory, the flash memory device has the function of storing data, and can provide data writing, reading, and erasing operations. Even if the power is cut off, the stored content will not disappear, and it has the function of saving data. The data storage function of the flash memory device is realized through the internal flash memory unit. The flash memory unit is a data storage area, and its main component is an array of flash memory unit structures, each flash memory unit structure corresponds to a binary number, which is used to store "0" or "1". A flash memory cell composed of a flash memory cell s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/792H01L29/51H01L27/115H01L21/336H01L21/285H01L21/8247H10B69/00
Inventor 崔崟季明华陈军
Owner SEMICON MFG INT (SHANGHAI) CORP