Unlock instant, AI-driven research and patent intelligence for your innovation.

Flash memory unit structure and preparation thereof

A flash memory cell and manufacturing method technology, applied in electrical components, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as threshold voltage drift, affecting applications, metal ion pollution, etc. Effect

Active Publication Date: 2010-04-21
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the use of discrete atomic islands of metal materials seriously affects the performance of semiconductor devices and integrated circuits, resulting in a decline in the yield of the production line
[0011] In summary, in the prior art, the SONOS structure will produce a threshold voltage drift phenomenon during the operation of the device, which affects its further application; using nanocrystals as the charge storage structure of the flash memory structural unit can solve the problem of threshold voltage drift , but the disadvantage is that the grain size is large and the ability to store charges is poor; the discrete atomic islands made of metal materials are used as the charge storage structure, and the ability to store charges is better than that of nanocrystals, which can also avoid the problem of threshold voltage drift, but it will bring contamination by metal ions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory unit structure and preparation thereof
  • Flash memory unit structure and preparation thereof
  • Flash memory unit structure and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] This embodiment provides a flash memory cell structure. Reference attachment figure 2 As shown, it includes a semiconductor substrate 101, a first dielectric layer 102 on the semiconductor substrate 101, a charge storage layer 103 on the first dielectric layer 102, a second dielectric layer 105 on the charge storage layer 103, and The gate 106 on the three-layer stack structure of the first dielectric layer 102 / charge storage layer 103 / second dielectric layer 105" and the semiconductor substrate 101 are located in the “first dielectric layer 102 / charge storage layer 103 / second dielectric layer The source 107 and the drain 108 on both sides of the 105" three-layer stack structure. The charge storage layer 103 includes non-metal discrete atom islands 104.

[0041] In this example, the semiconductor substrate 101 may be various semiconductor materials well known to those skilled in the semiconductor field, including silicon or silicon germanium (SiGe) with a single crystal ...

Embodiment 2

[0057] This embodiment provides a method for fabricating a flash memory cell structure. Reference attachment image 3 Implementation flowchart shown. Step S201, forming a first dielectric layer on the semiconductor substrate; Step S202, forming a charge storage layer on the first dielectric layer, including discrete non-metallic atomic islands; Step S203, forming a second dielectric layer on the charge storage layer; Step S204, annealing; step S205, forming source and drain electrodes on both sides of the three-layer stack structure composed of the first dielectric layer / storage charge layer / second dielectric layer; step S206, forming a gate on the three-layer stack structure pole.

[0058] Figure 4 to Figure 8 It is a schematic structural diagram of an embodiment of the present invention forming a flash memory cell structure. Such as Figure 4 As shown, the first dielectric layer 202 is formed on the semiconductor substrate 201.

[0059] In this example, referring to step S201...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A flash memory unit structure comprises a semiconductor substrate, a first dielectric layer positioned on the semiconductor substrate, an electric charge storage layer positioned on the first dielectric layer, a second dielectric layer positioned on the electric charge storage layer, and a grid positioned on a three-layer stacked structure composed of the first dielectric layer / the electric charge storage layer / the second dielectric layer, as well as a source and a drain positioned at the two sides of the three-layer stacked structure in the semiconductor substrate, wherein, the electric charge storage layer comprises a nonmetallic discrete atom island. The invention also provides a manufacturing method of the flash memory unit structure. The invention can effectively restrain drift of athreshold voltage, can improve the electric charge storage ability of the flash memory structure unit, and can avoid the problem of the pollution of metal ions caused by using a metal material.

Description

Technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a flash memory cell structure and a manufacturing method thereof. Background technique [0002] Flash memory devices are currently one of the devices widely used in the field of large-scale integrated circuits. As a semiconductor memory, a flash memory device has the function of storing data, and can provide data writing, reading, and erasing operations. Even if the power is turned off, the stored content will not disappear, and it has the function of saving data. The data storage function of the flash memory device is realized by the internal flash memory unit. The flash memory unit is the storage area of ​​data, the main component is the array of the flash memory cell structure, each flash memory cell structure corresponds to a binary number, used to store "0" or "1". A flash memory unit composed of a flash memory unit structure with a data storage funct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/792H01L29/51H01L27/115H01L21/336H01L21/285H01L21/8247H10B69/00
Inventor 崔崟季明华陈军
Owner SEMICON MFG INT (SHANGHAI) CORP