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Single crystal gan substrate and method of growing single crystal gan

A gallium nitride substrate and single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of carbon mixing, problems, and inability to overcome the consumption of a large amount of gas

Inactive Publication Date: 2009-03-25
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0039] Another problem is that when the displacement is concentrated at the bottom of the pit formed by the concave-convex surface, there is a planar defect 10 ( figure 1 (b))
However, there are problems when trying to make thick substrate crystals instead of thin films
Since the method uses a large amount of gas, the raw material gas yield is low
For thin films, this is not a problem, but for forming substrates, the low yield is a disadvantage
There is another problem: since the raw material contains organic matter and carbon, carbon will be mixed in when GaN is formed.
But it cannot overcome the disadvantage of consuming a large amount of gas

Method used

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Experimental program
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Embodiment 1

[0266] Embodiment 1 (sapphire substrate, Figure 10 )

[0267] The GaN substrate manufacturing method of the present invention (Embodiment 1) will be described. Manufacturing steps such as Figure 10 shown. A sapphire C-plane substrate 41 is used as the base substrate. Figure 10 (1) The sapphire substrate 41 is shown. Sapphire is a trigonal crystal system, and GaN also belongs to the same crystal system. The practical LEDs and LDs exclusively use sapphire C-plane substrates.

[0268] First, a GaN oriented growth layer 42 having a thickness of about 2 μm is formed on a sapphire substrate 41 in advance by MOCVD (metal organic CVD). Figure (2) shows a sectional view of this state. Accordingly, the surface of the GaN alignment growth layer 42 becomes the C-plane of GaN.

[0269] Uniformly form SiO with a thickness of about 100 nm on the GaN oriented growth layer 42 2 membrane. A striped mask pattern 43 is formed by photolithography, and its state is as follows: Figure...

Embodiment 2

[0376] Embodiment 2 (GaAs, Si, sapphire substrate, pattern A, H (A+ELO), Figure 11 )

[0377] Substrates of the following three kinds of dissimilar materials were prepared:

[0378] A. GaAs substrate (111) A side

[0379] B, C surface (0001) sapphire substrate

[0380] C, (111) plane Si substrate

[0381] Si is a cubic crystal system of diamond structure. GaAs is a cubic crystal system of zinc blende (Zinc Blende). GaN belongs to the hexagonal crystal system. Its C-plane has 3-fold rotational symmetry. In the cubic crystal system, only the (111) plane has 3 times of symmetry. Therefore, the GaAs and Si substrates adopt three-fold symmetry (111) plane substrates. The (111) plane of GaAs can be divided into Ga plane and As plane. A Ga plane is used here. The so-called A plane is a Group III plane, and here it is a Ga plane. Sapphire belongs to the trigonal crystal system, the same as the GaN crystal system. In order to grow crystals in the c-axis direction, sapphire u...

Embodiment 3

[0429] Embodiment 3 (due to differences in mask types)

[0430] (Mask type: SiN, Pt, W, SiO 2 )

[0431] Next, the effect of different mask materials was investigated. A plurality of GaAs substrates having a plane orientation (111) A plane were prepared. These samples include—

[0432] Formation of 0.15μm thick Si directly on (111) GaAs substrate 3 N 4 The product obtained after thin film (J), the product obtained after forming a 0.2 μm thick Pt thin film (K), the product obtained after forming a 0.2 μm thick W thin film (L), and the product obtained after forming a 0.1 μm thick SiO 2 The product (M) obtained by forming GaN with a thickness of 0.2 μm on the thin film, and SiO with a thickness of 0.1 μm 2 Product (N) obtained by forming AlN with a thickness of 0.2 μm on the thin film.

[0433] Regarding M, it is made by MOCVD method at low temperature (600°C) on SiO 2 GaN growth on thin film / GaAs substrate. Regarding N, it is at low temperature (700°C) in SiO 2 AlN gr...

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Abstract

The present invention provides a method of growing single crystal GaN and a single crystal GaN substrate. The single crystal GaN substrate is provided with a surface, a back surface and a thickness, has a defect accumulating region (H), a low dislocation single crystal region (Z) and a C-plane growth region (Y), and is configured with a HZYZ structure; the defect accumulating region (H) extends in a straight line and interpenetrates the back surface, has a width and two boundary lines (K, K) on two sides in width direction to ensure a shift to be aggregated inside; the low dislocation single crystal region (Z) extends in a straight line and interpenetrates the back surface, joins with the defect accumulating region (H) through the boundary line (K), has a width, and the shift density is lower than that of the defect accumulating region (H); the C-plane growth region (Y) locates nearly in the center of the low dislocation single crystal region (Z), extends in a straight line and interpenetrates the back surface, has a width, the shift density is lower than that of the defect accumulating region (H), and the resistivity is higher than that of the low dislocation single crystal region (Z), the width of the C-plane growth region (Y) has a random offset, and the C-plane growth region (Y) is not straight in the depth direction and a direction parallel to the surface.

Description

[0001] This application is a divisional application of the application number "02145712.3" and the title of the invention is "single crystal gallium nitride substrate, single crystal gallium nitride growth method and single crystal gallium nitride substrate manufacturing method". technical field [0002] The present invention relates to a single-crystal gallium nitride (GaN) substrate that can be used as a substrate of light-emitting elements such as light-emitting diodes (LEDs) and semiconductor laser devices (LDs) composed of Group III-V nitride semiconductors, and single-crystal nitrogen substrates. GaN growth method based on gallium nitride substrate manufacturing, and single crystal gallium nitride substrate manufacturing method. Background technique [0003] Light-emitting semiconductor devices using nitride-based semiconductors are already in practical use, and blue LEDs are representative. Conventionally, almost all light-emitting semiconductor devices using DHW-base...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/18C30B29/38C30B29/40H01L33/32
Inventor 元木健作弘田龙冈久拓司中畑成二
Owner SUMITOMO ELECTRIC IND LTD