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Monocrystalline silicon preparation method, solar cell and photovoltaic module

A technology for solar cells and single crystal silicon, applied in the field of solar cells, can solve the problems of solar cell light decay limiting battery replacement efficiency, etc., and achieves the advantages of solving the light decay problem, solving the resistivity distribution problem of gallium single crystal, and improving the defect distribution. Effect

Active Publication Date: 2020-08-25
JINKO GREEN ENERGY SHANGHAI MANAGEMENT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

B is usually selected as the doping element in monocrystalline silicon, and then in the drawing process, it is easy to form boron-oxygen (B-O) complexes, which will lead to light decay of solar cells and limit the replacement efficiency of cells

Method used

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  • Monocrystalline silicon preparation method, solar cell and photovoltaic module

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Experimental program
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Embodiment 1

[0036] This embodiment provides a method for preparing gallium-doped nitrogen-doped single crystal silicon, comprising the following steps:

[0037] (1) Loading

[0038] The gallium-containing dopant source and the polysilicon material are mixed and charged into the single crystal furnace. Optionally, the gallium-containing dopant source includes, but is not limited to, gallium simple substance, gallium-containing compound, gallium-containing alloy, and the like. In some embodiments, in order to introduce other impurities in the dopant source during crystal pulling, preferably, the gallium-containing dopant source uses gallium simple substance.

[0039] Specifically, a mixture of gallium simple substance and polycrystalline silicon material is placed in a quartz crucible in a single crystal furnace.

[0040] In some embodiments, the gallium-containing dopant source and the polysilicon material can be added in various ways. For example, it can be added through a re-feeding b...

Embodiment 2

[0062] This embodiment provides gallium-doped and nitrogen-doped Czochralski monocrystalline silicon rods prepared by means of multiple feeding cylinders.

[0063] (1) Loading

[0064] Mix gallium as a dopant with polysilicon, put the mixed material in a quartz crucible, and send them together into a single-crystal re-injection furnace; the mixed material of polysilicon and gallium needs to be placed in a quartz crucible.

[0065] (2) Molten silicon

[0066] Vacuum the single crystal furnace. After vacuuming, nitrogen and argon from independently adjustable nitrogen source and argon source are passed into the single crystal furnace through a three-way valve, and the ratio of nitrogen to argon is adjusted to 0.8. At the beginning of silicon melting, the heater adjusts the rotation speed of the quartz crucible. The pressure in the cavity of the single crystal furnace is maintained at 0.7 kPa by controlling the opening of the throttle valve of the vacuum pump.

[0067] At the ...

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Abstract

The invention provides a preparation method of a gallium-doped and nitrogen-doped monocrystalline silicon rod, which comprises the following steps: mixing elemental gallium and polycrystalline siliconin a single crystal furnace, and forming gallium-doped Czochralski monocrystalline silicon in a Czochralski crystal pulling mode; and in the process of forming the Czochralski monocrystalline silicon, introducing mixed gas of nitrogen and argon in different mixing proportions to enable the nitrogen element to enter the gallium-doped Czochralski monocrystalline silicon. The p-type single crystal is prepared by doping gallium into the monocrystalline silicon rod, so that the light attenuation of the p-type single crystal can be effectively reduced, and the conversion efficiency of a cell is improved. Besides, nitrogen is used as a doping gas in the drawing process of the monocrystalline silicon rod, so that the nitrogen element enters the monocrystalline silicon rod, the mechanical strengthof the monocrystalline silicon rod is improved, the impurity distribution condition in the monocrystalline silicon rod is improved, and the flaking of a monocrystalline silicon wafer and the improvement of the quality are facilitated.

Description

technical field [0001] This application relates to the technical field of solar cells, in particular to a method for preparing monocrystalline silicon, solar cells and photovoltaic modules. Background technique [0002] In existing solar cells, the properties of single crystal silicon and solar cells are usually improved by doping doping elements into single crystal silicon. For P-type Czochralski silicon, it is usually doped with group V elements, such as B, Al, Ga and In. B is usually selected as the doping element in single crystal silicon, and then in the drawing process, it is easy to form boron-oxygen (B-O) complexes, which will cause light decay of solar cells and limit the replacement efficiency of cells. In the future, monocrystalline silicon wafers will develop towards larger sizes and thinner slices, and the requirements for the mechanical strength of monocrystalline silicon will become higher and higher. High mechanical strength will facilitate the subsequent pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/04C30B31/04C30B31/18C30B29/06H01L31/0288
CPCC30B15/002C30B15/04C30B31/04C30B31/18C30B29/06H01L31/0288H01L31/1804Y02E10/547Y02P70/50
Inventor 何丽珠杨俊汪沛渊刘礼猛徐翔白枭龙尚伟泽
Owner JINKO GREEN ENERGY SHANGHAI MANAGEMENT CO LTD