Method and system for eliminating reaction ion auto-bias

Abstract

The invention discloses a method for eliminating self-bias voltage in reactive ion etching and a system thereof and belongs to the field of semiconductor processing and manufacturing. The method is as follows: an LC resonant loop which consists of an inductive loop L and a capacitance C is connected in parallel between two electrodes in the reaction chamber of reactive ion etching, and the resonant frequency of the LC resonant lop is the same as the frequency of the radio frequency power supply source in the reaction chamber of reactive ion etching. The system comprises a radio frequency power supply module, a matcher, a plasma device and a self-bias voltage eliminating module. By using the paralleled LC resonant loop, the self-bias voltage generated in normal reactive ion etching can short-circuit by the inductive loop, thus ensuring that the self-bias voltage in the reactive ion etching drops to zero or approaches zero and reducing the damage introduced by the reactive ion etching to the semiconductor crystal lattice.

Description

technical field [0001] The invention relates to the field of semiconductor processing and manufacturing, in particular to a method and system for eliminating self-bias voltage of reactive ion etching. Background technique [0002] Reactive Ion Etching (RIE) is one of the most commonly used processing methods in the manufacture of semiconductor devices and integrated circuits. Compared with general plasma etching (Plasma Etching, PE), it has fast etching rate, steep It has the advantages of good straightness and uniformity; compared with ICP (Inductive Coupled Plasma, inductively coupled plasma etching) and ECR (Electron Cyclotron Resonance, electron cyclotron resonance), it has the advantages of simple structure, low cost and convenient operation. . Based on the above advantages, reactive ion etching technology has been widely used in many technical fields, especially in etching SiO 2 In the case of materials and glue removal, etc., in this case, a certain ion bombardment ...

AI Technical Summary

Problems solved by technology

However, when using a reactive ion etching machine to etch semiconductor materials (such as Si, GaAs, GaN, etc.) or remove glue, due to the self-bias V b The existence of the semiconductor material will cause serious damage to the semiconductor lattice, so that the leakage of the device made of the semiconductor material will increase and the performance will deteriorate.

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