Silicon-based double hetero-junction visible blind ultraviolet detector and manufacturing method thereof

An ultraviolet detector, double heterojunction technology, applied in sustainable manufacturing/processing, final product manufacturing, semiconductor devices, etc., can solve problems such as inability to detect ultraviolet light

CN101409311BInactive Publication Date: 2010-04-21INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2010-04-21
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a silicon-based double heterojunction visible-blind UV detector and a manufacturing method thereof. The detector comprises a p-Si substrate, an MgO insulating layer, an n-ZnO-based thin film layer, an n-type ohmic contact electrode and a p-type ohmic contact electrode. The manufacturing method of the detector comprises the following steps: the MgO insulating layer is grownon a clean Si substrate by an epitaxial growth device, and the n-ZnO-based thin film layer is grown on the MgO insulating layer; the n-type ohmic contact electrode is deposited on the n-ZnO-based thinfilm layer by the well-known photo lithography and the well-known metal thin film deposition method; and the p-type ohmic contact electrode is deposited on the back face of the Si substrate. By the manufacturing method, high-performance visible-blind UV detectors can be manufactured on semiconductor Si substrates which are cheap and have mature integrated process.
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Description

technical field

[0001] The invention relates to a silicon-based double heterojunction visible-blind ultraviolet detector and its manufacturing method, especially obtained by inserting a layer of insulator material MgO between a p-Si substrate and a wide-bandgap semiconductor n-ZnO-based thin film Double heterojunction photodetectors with visible-blind ultraviolet response and methods for their fabrication. Background technique

[0002] As the core basic material of the third-generation semiconductor, ZnO has very superior photoelectric properties. Its room temperature bandgap is 3.37eV and the free exciton binding energy is 60meV. An important wide-bandgap semiconductor material has a very broad application prospect in the field of low-threshold, high-efficiency short-wavelength optoelectronic devices. ZnO-based UV detectors are currently one of the most promising applications. Because ZnO-based thin films have good photoconductive properties, they have great application v...

Examples

Embodiment 1

[0027] Example 1 as figure 2 As shown, the present invention provides a kind of n-ZnO / i-MgO / p-Si visible-blind ultraviolet detector, and its device structure comprises:

[0028] Si substrate 1, the Si substrate 1 is a p-type Si material, and its carrier concentration is 1×10 18-3 ;

[0029] MgO insulating layer 2, the thickness of the MgO insulating layer 2 is 50nm;

[0030] n-ZnO layer 3, the carrier concentration of the n-ZnO layer 3 is 4×10 16 cm -3 , whose thickness is 400nm;

[0031] n-type ohmic contact electrode 4, the electrode 4 is a Ti (20nm) / Au (40nm) metal electrode, and the metal Ti in the electrode 4 is in ohmic contact with the n-ZnO layer;

[0032] The p-type ohmic contact electrode 5 is an In metal electrode with a thickness of 0.1 mm.

[0033] The present invention can use radio frequency plasma-assisted molecular beam epitaxy equipment to realize the preparation of n-ZnO / i-MgO / p-Si heterojunction visible-blind ultraviolet photodetectors, and the specifi...

Embodiment 2

[0043] Example 2 as figure 2 As shown, the present invention provides a n-Mg 0.1 Zn 0.9 O / i-MgO / p-Si visible-blind UV detector, its device structure includes:

[0044] Si substrate 1, the Si substrate 1 is a p-type Si material, and its carrier concentration is 1×10 18 cm -3 ;

[0045] MgO insulating layer 2, the thickness of the MgO insulating layer 2 is 50nm;

[0046] n-Mg 0.1 Zn 0.9 O layer 3, the n-Mg 0.1 Zn 0.9 The carrier concentration of O layer 3 is 5×10 16 cm -3 , whose thickness is 300nm;

[0047] N-type ohmic contact electrode 4, this electrode 4 is Ti (20nm) / Au (40nm) metal electrode, metal Ti and n-Mg in this electrode 4 0.1 Zn 0.9 The O layer is an ohmic contact;

[0048] The p-type ohmic contact electrode 5 is an In metal electrode with a thickness of 0.1 mm.

[0049] The present invention can use radio frequency plasma assisted molecular beam epitaxy equipment to realize n-Mg 0.1 Zn 0.9 The preparation of O / i-MgO / p-Si heterojunction visible-bli...