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An ultraviolet detector, double heterojunction technology, applied in sustainable manufacturing/processing, final product manufacturing, semiconductor devices, etc., can solve problems such as inability to detect ultraviolet light
Inactive Publication Date: 2010-04-21
INST OF PHYSICS - CHINESE ACAD OF SCI
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But most of the existing n-ZnO / p-Si heterojunction photodetection devices still have a response to visible light (I.-S.Jeong, et al, Appl.Phys.Lett.83, 2946 (2003); C.H.Park , et al, Appl.Phys.Lett.82, 3973(2003); S.Mridha, et al, J.Appl.Phys.101, 083102(2007);), unable to detect ultraviolet light in visible light environment
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Embodiment 1
[0027] Example 1 as figure 2 As shown, the present invention provides a kind of n-ZnO / i-MgO / p-Si visible-blind ultraviolet detector, and its device structure comprises:
[0028] Si substrate 1, the Si substrate 1 is a p-type Si material, and its carrier concentration is 1×10 18-3 ;
[0029] MgO insulating layer 2, the thickness of the MgO insulating layer 2 is 50nm;
[0030] n-ZnO layer 3, the carrier concentration of the n-ZnO layer 3 is 4×10 16 cm -3 , whose thickness is 400nm;
[0031] n-type ohmic contact electrode 4, the electrode 4 is a Ti (20nm) / Au (40nm) metal electrode, and the metal Ti in the electrode 4 is in ohmic contact with the n-ZnO layer;
[0032] The p-type ohmic contact electrode 5 is an In metal electrode with a thickness of 0.1 mm.
[0033] The present invention can use radio frequencyplasma-assisted molecular beamepitaxy equipment to realize the preparation of n-ZnO / i-MgO / p-Si heterojunction visible-blind ultraviolet photodetectors, and the specifi...
Embodiment 2
[0043] Example 2 as figure 2 As shown, the present invention provides a n-Mg 0.1 Zn 0.9 O / i-MgO / p-Si visible-blind UV detector, its device structure includes:
[0044] Si substrate 1, the Si substrate 1 is a p-type Si material, and its carrier concentration is 1×10 18 cm -3 ;
[0045] MgO insulating layer 2, the thickness of the MgO insulating layer 2 is 50nm;
[0046] n-Mg 0.1 Zn 0.9 O layer 3, the n-Mg 0.1 Zn 0.9 The carrier concentration of O layer 3 is 5×10 16 cm -3 , whose thickness is 300nm;
[0047] N-type ohmic contact electrode 4, this electrode 4 is Ti (20nm) / Au (40nm) metal electrode, metal Ti and n-Mg in this electrode 4 0.1 Zn 0.9 The O layer is an ohmic contact;
[0048] The p-type ohmic contact electrode 5 is an In metal electrode with a thickness of 0.1 mm.
[0049] The present invention can use radio frequencyplasma assisted molecular beamepitaxy equipment to realize n-Mg 0.1 Zn 0.9 The preparation of O / i-MgO / p-Si heterojunction visible-bli...
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Abstract
The invention discloses a silicon-based double heterojunction visible-blind UV detector and a manufacturing method thereof. The detector comprises a p-Si substrate, an MgO insulating layer, an n-ZnO-based thin film layer, an n-type ohmic contactelectrode and a p-type ohmic contactelectrode. The manufacturing method of the detector comprises the following steps: the MgO insulating layer is grownon a clean Si substrate by an epitaxial growth device, and the n-ZnO-based thin film layer is grown on the MgO insulating layer; the n-type ohmic contactelectrode is deposited on the n-ZnO-based thinfilm layer by the well-known photo lithography and the well-known metal thin film deposition method; and the p-type ohmic contact electrode is deposited on the back face of the Si substrate. By the manufacturing method, high-performance visible-blind UV detectors can be manufactured on semiconductor Si substrates which are cheap and have mature integrated process.
Description
technical field [0001] The invention relates to a silicon-based double heterojunction visible-blind ultravioletdetector and its manufacturing method, especially obtained by inserting a layer of insulator material MgO between a p-Si substrate and a wide-bandgap semiconductor n-ZnO-based thin film Double heterojunction photodetectors with visible-blind ultraviolet response and methods for their fabrication. Background technique [0002] As the core basic material of the third-generation semiconductor, ZnO has very superior photoelectric properties. Its room temperature bandgap is 3.37eV and the free excitonbinding energy is 60meV. An important wide-bandgap semiconductor material has a very broad application prospect in the field of low-threshold, high-efficiency short-wavelength optoelectronic devices. ZnO-based UV detectors are currently one of the most promising applications. Because ZnO-based thin films have good photoconductive properties, they have great application v...
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