Method for preparing SiCp/Al electronic packing part

A technology for electronic packaging and parts, which is applied in the field of preparing SiCp/Al electronic packaging materials, can solve the problems of difficult filling of preforms, low yield, complicated equipment, etc., and achieves reduction of machining costs, low cost, and good material formability. Effect

Inactive Publication Date: 2009-06-10
CHONGQING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition to many processes, complex equipment, and many holes in the material, this

Method used

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  • Method for preparing SiCp/Al electronic packing part
  • Method for preparing SiCp/Al electronic packing part
  • Method for preparing SiCp/Al electronic packing part

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Experimental program
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Effect test

Embodiment 1

[0034] Raw materials: SiC particles with a particle size of 5-10 μm, and Al is ZL104 alloy. The volume ratio of SiC particles to Al-Si alloy is 20:80.

[0035] Take 17.00kg of ZL104 alloy and 5.04kg of 5-10μm SiC particles, melt and refine the alloy in a resistance furnace; then lower the temperature to 580°C, while the SiC particles are preheated to 250-300°C; then add SiC particles to cool down to 580°C In the melt, SiC is prepared by stirring casting method (the composite material preparation method has been mentioned in the background technology including stirring casting method) p / Al composite material slurry; then continue to stir and heat to 740-760°C for use; then put the sand core preheated to 120-140°C and the forming mold preheated to 520-600°C, and place them in the centrifugal casting. On the machine; then pour the molten composite material slurry into the cavity of the forming mold, and form it under the conditions of centrifugal speed of 700rpm and centrifugal...

Embodiment 2

[0037] Raw materials: SiC particles with a particle size of 10-15 μm, and Al is ZL101 alloy. The volume ratio of SiC particles to ZL101 alloy is 20:80.

[0038] Take 17.00kg of ZL101 alloy and 5.04kg of SiC particles with a particle size of 10-15μm, melt the alloy and refine it in a resistance furnace; then lower the temperature to 585°C, while preheating the SiC particles to 250-300°C; then add the SiC particles until the temperature is lowered to In the melt at 585 °C, SiC was prepared by stirring casting method p / Al composite material slurry, and heated to 720-740°C for use; then the sand core preheated to 120-140°C, the forming mold preheated to 520-600°C were molded and placed on the centrifugal casting forming machine; Then pour the molten composite material slurry into the cavity of the forming mold, and centrifuge it for about 2 minutes at a centrifugal speed of 700rpm to form it. After solidification, the casting is removed from the mold and cooled to room temperatu...

Embodiment 3

[0040] Raw materials: SiC particles with a particle size of 15-20 μm, Al is ZL104 alloy. The volume ratio of SiC particles to ZL104 alloy is 20:80.

[0041] Take 17.00kg of ZL104 alloy and 5.04kg of SiC particles with a particle size of 15-20μm, melt the alloy and refine it in a resistance furnace; then lower the temperature to 580°C, while preheating the SiC particles to 250-300°C; then add the SiC particles until the temperature is lowered to In the melt at 580 ℃, SiC was prepared by stirring casting method p / Al composite material slurry, and heated to 720-740°C for use; then the sand core preheated to 120-140°C, the forming mold preheated to 520-600°C were molded and placed on the centrifugal casting forming machine; Then pour the molten composite material slurry into the cavity of the forming mold, and centrifuge for about 2 minutes at a centrifugal speed of 700rpm to form. After solidification, the casting is removed from the mold and cooled to room temperature, and the...

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Abstract

The invention relates to a method for preparing a SiCp/Al electronic packaging component. The method adopts SiCp/Al composite materials as raw materials and adopts a centrifugal casting method to prepare the SiCp/Al electronic packaging component with a volume fraction between 40 and 75 percent. The materials of the component have the advantages of high thermal conductivity, low thermal expansion coefficient and high density. Moreover, the method has simple technique and equipment during preparation, short preparation period, can perform near-net forming, and has the advantages of low cost, low porosity and good material properties.

Description

technical field [0001] The invention belongs to the technical field of preparation of electronic packaging parts for multi-chip integration, and in particular provides a method for preparing SiC p / Al approach to electronic packaging materials. Background technique [0002] With the improvement of IC chip integration, electronic packaging is constantly developing towards miniaturization, light weight and high-density assembly. Since the 1990s, various high-density packaging technologies, such as chip size packaging (CSP) , Multi-chip modules (MCM) and unipolar integrated modules (SLIM) are emerging, which greatly increase the heat generation rate per unit volume of the system. In order to meet the above-mentioned rapid development of IC and packaging technology and fundamentally improve the performance of products, it is particularly important to develop new packaging materials with low expansion, high thermal conductivity and good comprehensive performance. [0003] SiC ...

Claims

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Application Information

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IPC IPC(8): C22C1/10B22D13/00C22C21/00
Inventor 刘昌明王开翟彦博唐晓亮何乃军邹茂华
Owner CHONGQING UNIV
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